ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FFSP1265A Silicon Carbide Schottky Diode www.onsemi.com FFSP1265A Silicon Carbide Schottky Diode 650 V, 12 A Features Description o Max Junction Temperature 175 C Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and Avalanche Rated 72 mJ higher reliability compared to Silicon. No reverse recovery High Surge Current Capacity current, temperature independent switching characteristics, and Positive Temperature Coefficient excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include Ease of Paralleling highest efficiency, faster operating frequency, increased power No Reverse Recovery / No Forward Recovery density, reduced EMI, and reduced system size and cost. Applications General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits TO-220-2L 1 2 2. Anode 1. Cathode 1. Cathode 2. Anode Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FFSP1265A Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 72 mJ AS Continuous Rectified Forward Current TC < 147C 12 A I F Continuous Rectified Forward Current TC < 135C 15 A T = 25 C, 10 s 940 A Non-Repetitive Peak Forward Surge Cur- C I F, Max rent T = 150 C, 10 s 890 A C I Non-Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 70 A F,SM p I Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 43 A F,RM p T = 25 C 115 W C Ptot Power Dissipation T = 150 C 19 W C T , T Operating and Storage Temperature Range -55 to +175 C J STG Thermal Characteristic Symbol Parameter Rating Unit R Thermal Resistance, Junction to Case, Max 1.3 C/W JC Semiconductor Components Industries, LLC, 2017 Publication Order Number: Sep, 2017, Rev.1.0 FFSP1265A/D 1