NSR05402NXT5G ON Semiconductor

NSR05402 500 mA, 40 V Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance www.onsemi.com enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. 40 V SCHOTTKY Features BARRIER DIODE Low Forward Voltage Drop 570 mV (Typ.) I = 500 mA F Low Reverse Current 3.0 A (Typ.) V = 40 V R 1 2 ESD Rating Human Body Model: Class 3B CATHODE ANODE ESD Rating Machine Model: Class C High Switching Speed These Devices are PbFree, Halogen Free/BFR Free and are RoHS MARKING Compliant DIAGRAM PIN 1 Typical Applications DSN2 (0201) PM LCD and Keypad Backlighting CASE 152AA Camera Photo Flash Buck and Boost dcdc Converters P = Specific Device Code M = Date Code Reverse Voltage and Current Protection Clamping and Protection ORDERING INFORMATION MAXIMUM RATINGS Device Package Shipping Rating Symbol Value Unit Reverse Voltage V 40 V NSR05402NXT5G DSN2 5000 / Tape & Reel R (PbFree) Forward Current (DC) I 500 mA F For information on tape and reel specifications, Forward Surge Current I A FSM including part orientation and tape sizes, please (60 Hz 1 cycle) 8.0 refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Repetitive Peak Forward Current I A FRM (Pulse Wave = 1 sec, Duty Cycle = 66%) 1.8 ESD Rating: Human Body Model ESD >8.0 kV Machine Model >400 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: June, 2019 Rev. 0 NSR05402/DNSR05402 THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 329 C/W JA Total Power Dissipation T = 25C P 380 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 140 C/W JA Total Power Dissipation T = 25C P 895 mW A D Storage Temperature Range T 40 to +125 C stg Junction Temperature T +150 C J 1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR 4 board 650 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. Figure 1. Thermal Response (Note 1) Figure 2. Thermal Response (Note 2) www.onsemi.com 2