NSR05T30XV2 500 mA, 30 V Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in spacing saving www.onsemi.com micropackaging ideal for space constraint applications. Features MARKING Low Forward Voltage Drop 370 mV (Typ.) I = 500 mA F 2 DIAGRAM Low Reverse Current 52 A (Typ.) V = 30 V R 1 500 mA of Continuous Forward Current YL SOD523 High Switching Speed 12 CASE 502 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant YL = Specific Device Code M Date Code Typical Applications LCD and Keypad Backlighting Camera Photo Flash 1 2 CATHODE ANODE Buck and Boost dcdc Converters Reverse Voltage and Current Protection Clamping & Protection ORDERING INFORMATION MAXIMUM RATINGS Device Package Shipping Rating Symbol Value Unit NSR05T30XV2T5G SOD523 8000 / Tape & Reverse Voltage V 30 V R (PbFree) Reel Forward Current (DC) I 500 mA F For information on tape and reel specifications, including part orientation and tape sizes, please Forward Surge Current I 3.0 A FSM refer to our Tape and Reel Packaging Specifications (60 Hz 1 cycle) Brochure, BRD8011/D. Repetitive Peak Forward Current I 1.5 A FRM (Pulse Wave = 1 sec, Duty Cycle = 66%) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: April, 2017 Rev. 0 NSR05T30XV2/D MNSR05T30XV2 THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 489 C/W JA Total Power Dissipation T = 25C P 250 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 358 C/W JA Total Power Dissipation T = 25C P 350 mW A D Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR4 board 650 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 1000 D = 0.5 0.2 100 0.1 0.05 0.02 10 0.01 1 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 1. Thermal Response (Note 1) 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 1 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 2. Thermal Response (Note 2) www.onsemi.com 2 R(t) (C/W) R(t) (C/W)