Schottky Barrier Diode NSR0630P2 Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dcdc converter, clamping and protection applications in portable devices. NSR0630P2 in a SOD 923 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting www.onsemi.com reduced space requirements. Features 30 V SCHOTTKY Very Low Forward Voltage Drop 370 mV 100 mA BARRIER DIODE Low Reverse Current 1.4 A 10 V VR 600 mA of Continuous Forward Current Power Dissipation of 190 mW with Minimum Trace Very High Switching Speed 1 2 CATHODE ANODE Low Capacitance CT = 10 pF These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MARKING 2 DIAGRAM Typical Applications LCD and Keypad Backlighting 1 Camera Photo Flash 6F M SOD923 CASE 514AB Buck and Boost dcdc Converters 12 Reverse Voltage and Current Protection Clamping & Protection 6F = Specific Device Code M = Month Code Markets Mobile Handsets MP3 Players ORDERING INFORMATION Digital Camera and Camcorders Device Package Shipping Notebook PCs & PDAs NSR0630P2T5G SOD923 2 mm Pitch GPS (PbFree) 8000/Tape & Reel For information on tape and reel specifications, MAXIMUM RATINGS including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Rating Symbol Value Unit Brochure, BRD8011/D. Reverse Voltage V 30 V R Forward Current (DC) I 600 mA F ESD Rating: Human Body Model ESD Class 3B Machine Model Class C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: September, 2019 Rev. 1 NSR0630P2/DNSR0630P2 THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 520 C/W JA Total Power Dissipation T = 25C P 190 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 175 C/W JA Total Power Dissipation T = 25C P 570 mW A D Junction and Storage Temperature Range T , T 55 to +125 C J stg 1. Mounted onto a 4 in square FR4 board 10 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR 4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 1.4 10 R (V = 30 V) 24 200 R Forward Voltage (I = 10 mA) V 0.28 0.37 V F F (I = 100 mA) 0.37 0.46 F (I = 500 mA) 0.52 0.62 F Total Capacitance 10 pF CT (V = 1.0 V, f = 1 MHz) R 10,000 1,000,000 100,000 1000 125C 10,000 100 85C 1000 10 100 25C 125C 10 1 40C 1 0.1 0.1 85C 0.01 0.01 25C 40C 0.001 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30 35 V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V) F R Figure 1. Forward Voltage Figure 2. Leakage Current 20 18 T = 25C A 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 V , REVERSE VOLTAGE (V) R Figure 3. Total Capacitance www.onsemi.com 2 I , FORWARD CURRENT (mA) F C , TOTAL CAPACITANCE (pF) T I , REVERSE CURRENT ( A) r