SS32 - SS320
Taiwan Semiconductor
3A, 20V - 200V Surface Mount Schottky Barrier Rectifier
FEATURES
KEY PARAMETERS
Low power loss, high efficiency
PARAMETER VALUE UNIT
Ideal for automated placement
I 3 A
F(AV)
Guard ring for over-voltage protection
V 20 - 200 V
RRM
High surge current capability
Compliant to RoHS Directive 2011/65/EU and
Package DO-214AB (SMC)
in accordance to WEEE 2002/96/EC
Configuration Single die
Halogen-free according to IEC 61249-2-21
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix means AEC-Q101 qualified
Packing code with suffix means green compound
(halogen-free)
DO-214AB (SMC)
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.21 g (approximately)
ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted)
A
SS SS SS SS SS SS SS SS SS
SYMBOL UNIT
PARAMETER
32 33 34 35 36 39 310 315 320
SS SS SS SS SS SS SS SS SS
Marking code on the device
32 33 34 35 36 39 310 315 320
Repetitive peak reverse voltage V 20 30 40 50 60 90 100 150 200 V
RRM
Reverse voltage, total rms value V 14 21 28 35 42 63 70 105 140 V
R(RMS)
Maximum DC blocking voltage V 20 30 40 50 60 90 100 150 200 V
DC
Forward current I 3 A
F(AV)
Surge peak forward current, 8.3
ms single half sine-wave
I 100 75 A
FSM
superimposed on rated load per
diode
Critical rate of rise of off-state
dV/dt 10,000 V/s
voltage
Junction temperature T - 55 to +125 - 55 to +150 C
J
Storage temperature T - 55 to +150 C
STG
1 Version:M1708
SS32 - SS320
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER SYMBOL LIMIT UNIT
Junction-to-lead thermal resistance per diode R 17 C/W
JL
Junction-to-ambient thermal resistance per diode R 55 C/W
JA
ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted)
A
PARAMETER CONDITIONS SYMBOL TYP. MAX. UNIT
SS32
SS33 - 0.50 V
SS34
SS35
- 0.75 V
(1)
Forward voltage per diode SS36 I = 3A, T = 25C V
F J F
SS39
- 0.85 V
SS310
SS315
- 0.95 V
SS320
SS32
SS33 - 0.40 V
SS34
SS35
- 0.65 V
(1)
Forward voltage per diode SS36 I = 3A, T = 100C V
F J F
SS39
- 0.70 V
SS310
SS315
- 0.80 V
SS320
SS32
SS33
SS34 - 0.5 mA
SS35
Reverse current @ rated V per
R
SS36 T = 25C I
(2) J R
diode
SS39
SS310
- 0.1 mA
SS315
SS320
SS32
SS33 - 10 mA
SS34
SS35
Reverse current @ rated V per - 5 mA
R
(2) SS36 T = 100C I
J R
diode
SS39
SS310
- - mA
SS315
SS320
SS32
SS33 - - mA
SS34
SS35
Reverse current @ rated V per - - mA
R
(2) SS36 T = 125C I
J R
diode
SS39
SS310
- 0.5 mA
SS315
SS320
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
2 Version:M1708