VS-30WQ10FN-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 3.5 A
FEATURES
Base
4
cathode
Low forward voltage drop
4, 2
Guard ring for enhanced ruggedness and long
term reliability
2
3
Popular D-PAK outline
1
1 3
Small foot print, surface mountable
TO-252AA (D-PAK) Anode Anode
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 C
PRODUCT SUMMARY
Material categorization: for definitions of compliance
Package TO-252AA (D-PAK)
please see www.vishay.com/doc?99912
I 3.5 A
F(AV)
DESCRIPTION
V 100 V
R
The VS-30WQ10FN-M3 surface mount Schottky rectifier
V at I See Electrical table
F F
has been designed for applications requiring low forward
I 4.9 mA at 125 C
RM
drop and small foot prints on PC board. Typical applications
T max. 150 C
J
are in disk drives, switching power supplies, converters,
Diode variation Single die
freewheeling diodes, battery charging, and reverse battery
protection.
E 5 mJ
AS
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Rectangular waveform 3.5 A
F(AV)
V 100 V
RRM
I t = 5 s sine 440 A
FSM p
V 3 A , T = 125 C 0.63 V
F pk J
T -40 to +150 C
J
VOLTAGE RATINGS
PARAMETER SYMBOL VS-30WQ10FN-M3 UNITS
Maximum DC reverse voltage V
R
100 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum average forward current
I 50 % duty cycle at T = 135 C, rectangular waveform 3.5
F(AV) C
See fig. 5
A
Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated load 440
non-repetitive surge current I condition and with rated
FSM
See fig. 7 10 ms sine or 6 ms rect. pulse V applied 70
RRM
Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 10 mH 5.0 mJ
AS J AS
Current decaying linearly to zero in 1 s
Repetitive avalanche current I 0.5 A
AR
Frequency limited by T maximum V = 1.5 x V typical
J A R
Revision: 22-Nov-16 Document Number: 93299
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-30WQ10FN-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
3 A 0.81
T = 25 C
J
6 A 0.96
Maximum forward voltage drop
(1)
V V
FM
See fig. 1
3 A 0.63
T = 125 C
J
6 A 0.74
T = 25 C 1
J
Maximum reverse leakage current
(1)
I V = Rated V mA
RM R R
See fig. 2
T = 125 C 4.9
J
Threshold voltage V 0.48 V
F(TO)
T = T maximum
J J
Forward slope resistance r 30.89 m
t
Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 92 pF
T R DC
Typical series inductance L Measured lead to lead 5 mm from package body 5.0 nH
S
Maximum voltage rate of change dV/dt Rated V 10 000 V/s
R
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
(1)
T , T -40 to +150 C
J Stg
temperature range
Maximum thermal resistance, DC operation
R 4.7 C/W
thJC
junction to case See fig. 4
0.3 g
Approximate weight
0.01 oz.
Marking device Case style D-PAK (similar to TO-252AA) 30WQ10FN
Note
dP
1
tot
(1)
------------- < --------------
thermal runaway condition for a diode on its own heatsink
dT R
J thJA
Revision: 22-Nov-16 Document Number: 93299
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000