VS-32CTQ025PbF, VS-32CTQ025-N3, VS-32CTQ030PbF, VS-32CTQ030-N3
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Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
FEATURES
Base
2
common
150 C T operation
J
cathode
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
Anode 2 Anode
and moisture resistance
13Common
TO-220AB
cathode
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Designed and qualified according to JEDEC-JESD47
Package TO-220AB
Halogen-free according to IEC 61249-2-21 definition
I 2 x 15 A
F(AV)
(-N3 only)
V 25 V, 30 V
R
DESCRIPTION
V at I 0.40 V
F F
The VS-32CTQ... Schottky rectifier series has been
I max. 97 mA at 125 C
RM
optimized for low reverse leakage at high temperature. The
T max. 150 C
J
proprietary barrier technology allows for reliable operation up
to 150 C junction temperature. Typical applications are in
Diode variation Common cathode
switching power supplies, converters, freewheeling diodes,
E 13 mJ
AS
and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Rectangular waveform 30 A
F(AV)
V 25/30 V
RRM
I t = 5 s sine 900 A
FSM p
V 15 A , T = 125 C 0.40 V
F pk J
T Range - 55 to 150 C
J
VOLTAGE RATINGS
PARAMETER SYMBOL VS-32CTQ025PbF VS-32CTQ025-N3 VS-32CTQ030PbF VS-32CTQ030-N3 UNITS
Maximum DC reverse voltage V
R
25 25 30 30 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
I 50 % duty cycle at T = 115 C, rectangular waveform 30
F(AV) C
See fig. 5
A
Maximum peak one cycle
5 s sine or 3 s rect. pulse Following any rated load 900
non-repetitive surge current I condition and with rated
FSM
10 ms sine or 6 ms rect. pulse V applied 250
RRM
See fig. 7
Non-repetitive avalanche energy E T = 25 C, I = 1.20 A, L = 11.10 mH 13 mJ
AS J AS
Current decaying linearly to zero in 1 s
Repetitive avalanche current I 3A
AR
Frequency limited by T maximum V = 1.5 x V typical
J A R
Revision: 11-Oct-11 Document Number: 94202
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-32CTQ025PbF, VS-32CTQ025-N3, VS-32CTQ030PbF, VS-32CTQ030-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
15 A 0.49
T = 25 C
J
30 A 0.58
Maximum forward voltage drop
(1)
V V
FM
See fig. 1
15 A 0.40
T = 125 C
J
30 A 0.53
T = 25 C 1.75
Maximum reverse leakage current J
(1)
I V = Rated V mA
RM R R
See fig. 2
T = 125 C 97
J
Threshold voltage V 0.233 V
F(TO)
T = T maximum
J J
Forward slope resistance r 9.09 m
t
Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 1300 pF
T R DC
Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V 10 000 V/s
R
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum junction and storage
T , T - 55 to 150 C
J Stg
temperature range
Maximum thermal resistance, DC operation
R 3.25
thJC
junction to case per leg See fig. 4
C/W
Typical thermal resistance,
R Mounting surface, smooth and greased 0.50
thCS
case to heatsink
2g
Approximate weight
0.07 oz.
minimum 6 (5)
kgf cm
Mounting torque
(lbf in)
maximum 12 (10)
32CTQ025
Marking device Case style TO-220AB
32CTQ030
Revision: 11-Oct-11 Document Number: 94202
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000