32CTQ...S/32CTQ...-1 Vishay High Power Products Schottky Rectifier, 2 x 15 A 32CTQ...S 32CTQ...-1 FEATURES 150 C T operation J Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for Base Base enhanced mechanical strength and moisture resistance common common cathode cathode Guard ring for enhanced ruggedness and long term 2 2 reliability Designed and qualified for Q101 level DESCRIPTION 2 2 1 3 1 3 Common Common The 32CTQ... Schottky rectifier series has been optimized Anode cathode Anode Anode Anode cathode for low reverse leakage at high temperature. The proprietary 2 D PAK TO-262 barrier technology allows for reliable operation up to 150 C junction temperature. Typical applications are in switching PRODUCT SUMMARY power supplies, converters, freewheeling diodes, and I 2 x 15 A reverse battery protection. F(AV) V 25/30 V R MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 30 A F(AV) V 25/30 V RRM I t = 5 s sine 900 A FSM p V 15 Apk, T = 125 C 0.40 V F J T Range - 55 to 150 C J VOLTAGE RATINGS 32CTQ025S 32CTQ030S PARAMETER SYMBOL UNITS 32CTQ025-1 32CTQ030-1 Maximum DC reverse voltage V R 25 30 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 115 C, rectangular waveform 30 F(AV) C See fig. 5 Maximum peak one cycle non-repetitive Following any rated load A 5 s sine or 3 s rect. pulse 900 surge current I condition and with rated FSM 10 ms sine or 6 ms rect. pulse 250 See fig. 7 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1.20 A, L = 11.10 mH 13 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 3A AR Frequency limited by T maximum V = 1.5 x V typical J A R Document Number: 93961 For technical questions, contact: diodes-tech vishay.com www.vishay.com Revision: 21-Aug-08 1 32CTQ...S/32CTQ...-1 Schottky Rectifier, 2 x 15 A Vishay High Power Products ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 15 A 0.49 T = 25 C J 30 A 0.58 Maximum forward voltage drop (1) V V FM See fig. 1 15 A 0.40 T = 125 C J 30 A 0.53 T = 25 C 1.75 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 97 J Threshold voltage V 0.233 V F(TO) T = T maximum J J Forward slope resistance r 9.09 m t Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 1300 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T - 55 to 150 C J Stg temperature range Maximum thermal resistance, DC operation R 3.25 thJC See fig. 4 junction to case per leg C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 32CTQ025S 2 Case style D PAK 32CTQ030S Marking device 32CTQ025-1 Case style TO-262 32CTQ030-1 www.vishay.com For technical questions, contact: diodes-tech vishay.com Document Number: 93961 2 Revision: 21-Aug-08