VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A FEATURES 150 C T operation J Low forward voltage drop High frequency operation 2 High purity, high temperature epoxy 1 encapsulation for enhanced mechanical 1 3 2 strength and moisture resistance 2 D PAK (TO-263AB) 3 TO-262AA Guard ring for enhanced ruggedness and long term Base Base reliability common common Meets MSL level 1, per J-STD-020, LF maximum peak cathode cathode of 245 C 2 2 Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 2 2 1 1 Common 3 3 Common Anode cathode Anode Anode cathode Anode DESCRIPTION The VS-32CTQ... Schottky rectifier series has been VS-32CTQ...S-M3 VS-32CTQ...-1-M3 optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 C junction temperature. Typical applications ar e PRIMARY CHARACTERISTICS in switching power supplies, converters, freewheeling I 2 x 15 A F(AV) diodes, and reverse battery protection. V 25 V, 30 V R V at I 0.40 V F F I typ. 97 mA at 125C RM T max. 150 C J E 13 mJ AS 2 Package D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 30 A F(AV) V 25, 30 V RRM I t = 5 s sine 900 A FSM p V 15 A , T = 125 C 0.40 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS VS-32CTQ025S-M3 VS-32CTQ030S-M3 PARAMETER SYMBOL UNITS VS-32CTQ025-1-M3 VS-32CTQ030-1-M3 Maximum DC reverse voltage V R 25 30 V Maximum working peak reverse voltage V RWM Revision: 07-May-2020 Document Number: 94936 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 115 C, rectangular waveform 30 F(AV) C See fig. 5 A Maximum peak one cycle non-repetitive 5 s sine or 3 s rect. pulse Following any rated load 900 surge current I condition and with rated FSM 10 ms sine or 6 ms rect. pulse 250 See fig. 7 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1.20 A, L = 11.10 mH 13 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 3A AR Frequency limited by T maximum V = 1.5 x V typical J A R ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 15 A 0.49 T = 25 C J 30 A 0.58 Maximum forward voltage drop (1) V V FM See fig. 1 15 A 0.40 T = 125 C J 30 A 0.53 T = 25 C 1.75 J (1) Maximum reverse leakage current I V = Rated V mA RM R R T = 125 C 145 J (1) Typical reverse leakage current I T = 125 C V = Rated V 97 mA RM J R R Threshold voltage V 0.233 V F(TO) T = T maximum J J Forward slope resistance r 9.09 m t Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 1300 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +150 C J Stg temperature range Maximum thermal resistance, DC operation R 3.25 thJC junction to case per leg See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 32CTQ025S 2 Case style D PAK (TO-263AB) 32CTQ030S Marking device 32CTQ025-1 Case style TO-262AA 32CTQ030-1 Revision: 07-May-2020 Document Number: 94936 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000