B150AE-B160AE Green B150BE-B160BE 1.0A SCHOTTKY BARRIER RECTIFIER Product Summary Features and Benefits B150AE/B160AE Reduced Low Forward Voltage Drop (V ) Better Efficiency and F B150BE/B160BE Cooler Operation V (V) I (mA) F(MAX) R(MAX) V (V) I (A) RRM O Reduced High-temperature Reverse Leakage Increased +25C +25C Reliability against Thermal Runaway Failure in High 50 1 0.65 0.1 60 1 0.65 0.2 Temperature Operation. Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data The Schottky rectifier providing low V and excellent reverse leakage Case: SMA, SMB F stability at high temperatures, this device is ideal for use in general Case Material: Molded Plastic, Green Molding Compound. UL rectification applications such as: Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Boost Diode Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Blocking Diode Solderable per MIL-STD-202, Method 208 Recirculating Diode Polarity: Cathode Band Weight: SMA-0.063 grams (Approximate) SMB-0.093 grams (Approximate) SMA/SMB Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging B150AE-13 SMA 5,000/Tape & Reel B160AE-13 SMA 5,000/Tape & Reel B150BE-13 SMB 3,000/Tape & Reel B160BE-13 SMB 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See B150AE-B160AE B150BE-B160BE Marking Information (Cont.) SMB B1XXBE = Product Type Marking Code, ex: B150BE = Manufacturers Code Marking YWW = Date Code Marking Y = Last Digit of Year (ex: 7 for 2017) B1XXBE WW = Week Code (01 to 53) Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. B150AE B160AE Characteristic Symbol Unit B150BE B160BE V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 50 60 V V RWM DC Blocking Voltage V RM Average Rectified Output Current I 1 A O Non-Repetitive Peak Forward Surge Current 8.3ms 30 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) SMA 95 C/W R JA SMB 90 Typical Thermal Resistance Junction to Case (Note 5) SMA 45 C/W R JC SMB 40 Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition I = 1A, T = +25C 0.65 F J Forward Voltage Drop V V F I = 1A, T = +125C F J V = 50V, T = +25C B150AE/B150BE 0.1 R J Leakage Current (Note 6) B160AE/B160BE I 0.2 mA V = 60V, T = +25C R R J 8.0 V = 60V, T = +125C R J Typical Capacitance 45 pF C V = 4.0V, f = 1MHz T R Notes: 5. Device mounted on FR-4 substrate, 0.4 x 0.5 , 2oz, single-sided, PC boards with 0.2 x 0.25 copper pad. 6. Short duration pulse test used to minimize self-heating effect. 2 of 6 B150AE(BE)-B160AE(BE) March 2017 Diodes Incorporated www.diodes.com Document number: DS39267 Rev. 3 - 2 NEW PRODUCT