31DQ05, 31DQ06 Vishay High Power Products Schottky Rectifier, 3.3 A FEATURES Low profile, axial leaded outline High frequency operation Very low forward voltage drop High purity, high temperature epoxy encapsulation for Cathode Anode enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability C-16 Lead (Pb)-free plating Designed and qualified for industrial level DESCRIPTION PRODUCT SUMMARY The 31DQ.. axial leaded Schottky rectifier has been I 3.3 A F(AV) optimized for very low forward voltage drop, with moderate 50/60 V V R leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 3.3 A F(AV) V 50/60 V RRM I t = 5 s sine 340 A FSM p V 3 Apk, T = 25 C 0.62 V F J T - 40 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOL 31DQ05 31DQ06 UNITS Maximum DC reverse voltage V R 50 60 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 105 C, rectangular waveform 3.3 F(AV) L See fig. 4 A Maximum peak one cycle Following any rated load 5 s sine or 3 s rect. pulse 340 non-repetitive surge current I condition and with rated FSM 10 ms sine or 6 ms rect. pulse 55 See fig. 6 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 10 mH 5.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Document Number: 93320 For technical questions, contact: diodes-tech vishay.com www.vishay.com Revision: 06-Nov-08 1 31DQ05, 31DQ06 Schottky Rectifier, 3.3 A Vishay High Power Products ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 3 A 0.62 T = 25 C J 6 A 0.78 Maximum forward voltage drop (1) V V FM See fig. 1 3 A 0.54 T = 125 C J 6 A 0.65 T = 25 C 2 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 4 T = 125 C 15 J Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 160 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 9.0 nH S Maximum voltage rate of charge dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T - 40 to 150 C J Stg temperature range Maximum thermal resistance, DC operation R 80 thJA junction to ambient Without cooling fin C/W Typical thermal resistance, R DC operation 15 thJL junction to lead 1.2 g Approximate weight 0.042 oz. 31DQ05 Marking device Case style C-16 31DQ06 Note dP 1 tot (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA www.vishay.com For technical questions, contact: diodes-tech vishay.com Document Number: 93320 2 Revision: 06-Nov-08