VS-MBRB20...CT-M3, VS-MBR20...CT-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 10 A FEATURES 150 C T operation J Low forward voltage drop High frequency operation 2 2 1 Center tap D PAK (TO-263 AB) and TO-262AA 1 packages 3 2 High purity, high temperature epoxy encapsulation for 2 D PAK (TO-263AB) 3 TO-262AA enhanced mechanical strength and moisture resistance Base Base Guard ring for enhanced ruggedness and long term common common cathode cathode reliability 2 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance 2 2 1 3 1 3 Common Common please see www.vishay.com/doc 99912 cathode Anode Anode Anode cathode Anode DESCRIPTION VS-MBRB20..CT-M3 VS-MBR20..CT-1-M3 This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier PRIMARY CHARACTERISTICS technology allows for reliable operation up to 150 C junction temperature. Typical applications are in switching I 2 x 10 A F(AV) power supplies, converters, freewheeling diodes, and V 80 V, 90 V, 100 V R reverse battery protection. V at I 0.70 V F F I max. 6 mA at 125 C RM T max. 150 C J E 7 mJ AS 2 Package D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform (per device) 20 F(AV) A I T = 133 C (per leg) 20 FRM C V 80 to 100 V RRM I t = 5 s sine 850 A FSM p V 10 A , T = 125 C 0.70 V F pk J T Range -65 to +150 C J VOLTAGE RATINGS VS-MBRB2080CT-M3 VS-MBRB2090CT-M3 VS-MBRB20100CT-M3 PARAMETER SYMBOL UNITS VS-MBR2080CT-1-M3 VS-MBR2090CT-1-M3 VS-MBR20100CT-1-M3 Maximum DC reverse voltage V R 80 90 100 V Maximum working peak reverse voltage V RWM Revision: 03-Nov-17 Document Number: 96404 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-MBRB20...CT-M3, VS-MBR20...CT-1-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 10 Maximum average I T = 133 C, rated V F(AV) C R forward current per device 20 Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 133 C 20 FRM R C 5 s sine or Following any rated load condition 850 A 3 s rect. pulse and with rated V applied RRM Non-repetitive peak surge current I FSM Surge applied at rated load conditions halfwave, 150 single phase, 60 Hz Peak repetitive reverse surge current I 2.0 s, 1.0 kHz 0.5 RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 2 A, L = 12 mH 24 mJ AS J AS ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 10 A 0.80 T = 25 C J 20 A 0.95 (1) Maximum forward voltage drop V V FM 10 A 0.70 T = 125 C J 20 A 0.85 T = 25 C 0.10 Maximum instantaneous J (1) I Rated DC voltage mA RM reverse current T = 125 C 6 J Threshold voltage V 0.433 V F(TO) T = T maximum J J Forward slope resistance r 15.8 m t Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 400 pF T R DC Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T -65 to 150 J C Maximum storage temperature range T -65 to 175 Stg Maximum thermal resistance, R DC operation 2.0 thJC junction to case per leg Typical thermal resistance, R Mounting surface, smooth and greased 0.50 C/W thCS case to heatsink Maximum thermal resistance, R DC operation 50 thJA junction to ambient 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) MBRB2080CT 2 Case style D PAK (TO-263AB) MBRB2090CT MBRB20100CT Marking device MBR2080CT-1 Case style TO-262AA MBR2090CT-1 MBR20100CT-1 Revision: 03-Nov-17 Document Number: 96404 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000