VS-MBRB4045CT-M3, VS-MBR4045CT-1-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 20 A
FEATURES
150 C T operation
J
Low forward voltage drop
High frequency operation
2
2
1
Center tap TO-220, D PAK and TO-262
1 packages
3
2
High purity, high temperature epoxy
2
D PAK (TO-263AB) 3 TO-262AA
encapsulation for enhanced mechanical strength and
Base Base
moisture resistance
common common
cathode cathode
Guard ring for enhanced ruggedness and long term
2 2
reliability
Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 C
Designed and qualified according to JEDEC -JESD 47
2 2
1 3 1 3
Common Common
Material categorization: for definitions of compliance
Anode cathode Anode Anode Anode
cathode
please see www.vishay.com/doc?99912
VS-MBRB4045CT-M3 VS-MBR4045CT-1-M3
DESCRIPTION
The center tap Schottky rectifier has been optimized for low
PRIMARY CHARACTERISTICS
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 C
I 2 x 20 A
F(AV)
junction temperature. Typical applications are in switching
V 45 V
R
power supplies, converters, freewheeling diodes, and
V at I 0.58 V
F F
reverse battery protection.
I max. 95 mA at 125 C
RM
T max. 150 C
J
E 20 mJ
AS
2
Package D PAK (TO-263AB), TO-262AA
Circuit configuration Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Rectangular waveform (per device) 40
F(AV)
A
I T = 118 C (per leg) 40
FRM C
V 45 V
RRM
I t = 5 s sine 900 A
FSM p
V 20 A , T = 125 C 0.58 V
F pk J
T Range -65 to +150 C
J
VOLTAGE RATINGS
VS-MBRB4045CT-M3
PARAMETER SYMBOL UNITS
VS-MBR4045CT-1-M3
Maximum DC reverse voltage V
R
45 V
Maximum working peak reverse voltage V
RWM
Revision: 06-Nov-17 Document Number: 96408
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRB4045CT-M3, VS-MBR4045CT-1-M3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
per leg 20
Maximum average
I T = 118 C, rated V
F(AV) C R
forward current
per device 40
Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 118 C 40
FRM R C
A
Following any rated
5 s sine or 3 s rect. pulse 900
Maximum peak one cycle non-repetitive
I load condition and with
FSM
peak surge current per leg
10 ms sine or 6 ms rect. pulse 210
rated V applied
RRM
Non-repetitive avalanche energy per leg E T = 25 C, I = 3 A, L = 4.4 mH 20 mJ
AS J AS
Current decaying linearly to zero in 1 s
Repetitive avalanche current per leg I 3A
AR
Frequency limited by T maximum V = 1.5 x V typical
J A R
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
20 A 0.60
T = 25 C
J
40 A 0.78
(1)
Maximum forward voltage drop V V
FM
20 A 0.58
T = 125 C
J
40 A 0.75
T = 25 C 1
J
Maximum instantaneous
(1)
I T = 100 C Rated DC voltage 50 mA
RM J
reverse current
T = 125 C 95
J
Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 900 pF
T R DC
Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V 10 000 V/s
R
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T -65 to 150
J
C
Maximum storage temperature range T -65 to 175
Stg
Maximum thermal resistance,
R DC operation 1.5
thJC
junction to case per leg
Typical thermal resistance, Mounting surface, smooth, and greased
R 0.50 C/W
thCS
case to heatsink (Only for TO-220)
Maximum thermal resistance, DC operation
R 50
thJA
2
junction to ambient (For D PAK and TO-262)
2g
Approximate weight
0.07 oz.
minimum 6 (5)
kgf cm
Mounting torque Non-lubricated threads
(lbf in)
maximum 12 (10)
2
Case style D PAK (TO-263AB) MBRB4045CT
Marking device
Case style TO-262 MBR4045CT-1
Revision: 06-Nov-17 Document Number: 96408
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000