VS-MBRB735PbF, VS-MBRB745PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 7.5 A FEATURES Base 150 C T operation cathode J 2 High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 3 1 2 TO-263AB (D PAK) N/C Anode Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C PRODUCT SUMMARY AEC-Q101 qualified, meets JESD 201, class 1A whisker 2 Package TO-263AB (D PAK) test I 7.5 V F(AV) Material categorization: for definitions of compliance V 35 V, 45 V R please see www.vishay.com/doc 99912 V at I 0.57 F F I max. 15 mA at 125 C RM DESCRIPTION T max. 150 C J The VS-MBRB7... Schottky rectifier series has been Diode variation Single die optimized for low reverse leakage at high temperature. The E 7.0 mJ AS proprietary barrier technology allows for reliable operation up to 150 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 7.5 A F(AV) V 35, 45 V RRM I t = 5 s sine 690 A FSM p V 7.5 A , T = 125 C 0.57 V F pk J T Range -65 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-MBRB735PbF VS-MBRB745PbF UNITS Maximum DC reverse voltage V R 35 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 131 C, rated V 7.5 F(AV) C R Following any rated load condition 5 s sine 690 A and with rated V applied Non-repetitive peak surge current I RRM FSM Surge applied at rated load condition halfwave single phase 60 Hz 150 Non-repetitive avalanche energy E T = 25 C, I = 2 A, L = 3.5 mH 7 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 17-Nov-16 Document Number: 94312 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-MBRB735PbF, VS-MBRB745PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 15 A T = 25 C 0.84 J (1) Maximum forward voltage drop V 7.5 A 0.57 V FM T = 125 C J 15 A 0.72 T = 25 C 0.1 J (1) Maximum instantaneous reverse current I Rated DC voltage mA RM T = 125 C 15 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 400 pF T R DC Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T -65 to +150 J C Maximum storage temperature range T -65 to +175 Stg Maximum thermal resistance, R DC operation 3.0 thJC junction to case C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) MBRB735 2 Marking device Case style D PAK MBRB745 Revision: 17-Nov-16 Document Number: 94312 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000