VS-MBRS130L-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A FEATURES Small foot print, surface mountable Very low forward voltage drop Cathode Anode High frequency operation Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak SMB of 260 C Material categorization: for definitions of compliance PRODUCT SUMMARY please see www.vishay.com/doc 99912 Package SMB DESCRIPTION I 1.0 A F(AV) The VS-MBRS130L-M3 surface mount Schottky rectifier V 30 V R has been designed for applications requiring low forward V at I 0.30 V F F drop and small foot prints on PC boards. Typical I max. 20 mA at 125 C RM applications are in disk drives, switching power supplies, T max. 125 C J converters, freewheeling diodes, battery charging, and Diode variation Single die reverse battery protection. E 3.0 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 1.0 A F(AV) V 30 V RRM I t = 5 s sine 230 A FSM p V 1.0 A , T = 125 C 0.30 V F pk J T Range -55 to +125 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-MBRS130L-M3 UNITS Maximum DC reverse voltage V R 30 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 112 C, rectangular waveform 1.0 F(AV) L Following any rated load 5 s sine or 3 s rect. pulse 230 A Maximum peak one cycle I condition and with rated FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 40 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 6 mH 3.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 03-Feb-15 Document Number: 95745 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-MBRS130L-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 1 A 0.420 T = 25 C J 2 A 0.470 (1) Maximum forward voltage drop V V FM 1 A 0.300 T = 125 C J 2 A 0.370 T = 25 C 1 J (1) Maximum reverse leakage current I T = 100 C V = Rated V 10 mA RM J R R T = 125 C 20 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 200 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 2.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS (1) Maximum junction temperature range T -55 to +125 J C Maximum storage temperature range T -55 to +150 Stg Maximum thermal resistance, DC operation (2) R 25 thJL junction to lead See fig. 4 C/W Maximum thermal resistance, R DC operation 80 thJA junction to ambient 0.10 g Approximate weight 0.003 oz. Marking device Case style SMB (similar to DO-214AA) 13L Notes dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA (2) Mounted 1 square PCB Revision: 03-Feb-15 Document Number: 95745 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000