VS-MBRB1035PbF, VS-MBRB1045PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES Base 150 C T operation J cathode 2 TO-220 and D PAK packages 2 Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical 3 2 1 TO-263AB (D PAK) strength and moisture resistance N/C Anode Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak PRODUCT SUMMARY of 260 C 2 Package TO-263AB (D PAK) AEC-Q101 qualified I 10 A F(AV) Material categorization: for definitions of compliance V 35 V, 45 V please see www.vishay.com/doc 99912 R V at I 0.57 V F F DESCRIPTION I max. 15 mA at 125 C RM This Schottky rectifier has been optimized for low reverse T max. 150 C J leakage at high temperature. The proprietary barrier Diode variation Single die technology allows for reliable operation up to 150 C junction temperature. Typical applications are in switching E 8.0 mJ AS power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 10 F(AV) A I T = 135 C 20 FRM C V 35, 45 V RRM I t = 5 s sine 1060 A FSM p V 10 A , T = 125 C 0.57 V F pk J T Range -65 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-MBRB1035PbFVS-MBRB1045PbFUNITS Maximum DC reverse voltage V R 35 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 135 C, rated V 10 F(AV) C R Peak repetitive forward current I Rated V , square wave, 20 kHz, T = 135 C 20 FRM R C Following any rated load A 5 s sine or 3 s rect. pulse condition and with rated V 1060 RRM Non-repetitive surge current I FSM applied Surge applied at rated load conditions halfwave, single phase, 60 Hz 150 Non-repetitive avalanche energy E T = 25 C, I = 2 A, L = 4 mH 8 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 05-Aug-14 Document Number: 94302 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-MBRB1035PbF, VS-MBRB1045PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 20 A T = 25 C 0.84 J (1) Maximum forward voltage drop V 10 A 0.57 V FM T = 125 C J 20 A 0.72 T = 25 C 0.1 J Maximum instantaneous reverse I (1) Rated DC voltage mA RM current T = 125 C 15 J Threshold voltage V 0.354 V F(TO) T = T maximum J J Forward slope resistance r 17.6 m t Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 600 pF T R DC Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction temperature range T -65 to +150 J C Maximum storage temperature range T -65 to +175 Stg Maximum thermal resistance, R DC operation 2.0 thJC junction to case C/W Typical thermal resistance, Mounting surface, smooth and greased R 0.50 thCS case to heatsink (Only for TO-220) 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) MBRB1035 2 Marking device Case style D PAK MBRB1045 Revision: 05-Aug-14 Document Number: 94302 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000