VS-MBRB1635-M3, VS-MBRB1645-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 16 A
FEATURES
Base
150 C T operation
J
cathode
2
High frequency operation
Low forward voltage drop
High purity, high temperature epoxy
2
encapsulation for enhanced mechanical
1
strength and moisture resistance
3
1
3 Guard ring for enhanced ruggedness and long term
N/C Anode
2 reliability
D PAK (TO-263AB)
Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 C
PRIMARY CHARACTERISTICS
Designed and qualified according to JEDEC -JESD 47
I 16 A
F(AV)
Material categorization: for definitions of compliance
V 35 V, 45 V
R
please see www.vishay.com/doc?99912
V at I 0.57 V
F F
I 40 mA at 125 C DESCRIPTION
RM
T max. 150 C
J This VS-MBRB16... Schottky rectifier has been optimized
E 24 mJ for low reverse leakage at high temperature. The proprietary
AS
2
barrier technology allows for reliable operation up to 150 C
Package D PAK (TO-263AB)
junction temperature. Typical applications are in switching
Circuit configuration Single
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Rectangular waveform 16 A
F(AV)
V 35/45 V
RRM
I t = 5 s sine 1800 A
FSM p
V 16 A , T = 125 C 0.57 V
F pk J
T -65 to +150 C
J
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRB1635-M3 VS-MBRB1645-M3 UNITS
Maximum DC reverse voltage V
R
35 45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I T = 134 C, rated V 16
F(AV) C R
Following any rated
5 s sine or 3 s rect. pulse load condition and with 1800
A
rated V applied
Non-repetitive peak surge current I RRM
FSM
Surge applied at rated load condition half wave
150
single phase 60 Hz
Non-repetitive avalanche energy E T = 25 C, I = 3.6 A, L = 3.7 mH 24 mJ
AS J AS
Current decaying linearly to zero in 1 s
Repetitive avalanche current I 3.6 A
AR
Frequency limited by T maximum V = 1.5 x V typical
J A R
Revision: 03-Nov-17 Document Number: 96394
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRB1635-M3, VS-MBRB1645-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
T = 25 C 0.63
J
(1)
Maximum forward voltage drop V 16 A V
FM
T = 125 C 0.57
J
T = 25 C 0.2
Maximum instantaneous
J
(1)
I Rated DC voltage mA
RM
reverse current
T = 125 C 40
J
Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 1400 pF
T R DC
Typical series inductance L Measured lead from top of terminal to mounting plane 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V 10 000 V/s
R
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T -65 to 150
J
C
Maximum storage temperature range T -65 to 175
Stg
Maximum thermal resistance,
R DC operation 1.50
thJC
junction to case
C/W
Typical thermal resistance,
R Mounting surface, smooth and greased 0.50
thCS
case to heatsink
2g
Approximate weight
0.07 oz.
minimum 6 (5)
kgf cm
Mounting torque
(lbf in)
maximum 12 (10)
MBRB1635
2
Marking device Case style D PAK (TO-263AB)
MBRB1645
Revision: 03-Nov-17 Document Number: 96394
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000