MBR745, MBR760, MBRF745 www.vishay.com Vishay General Semiconductor Schottky Barrier Rectifier FEATURES Power pack TO-220AC ITO-220AC Guardring for overvoltage protection Low power loss, high efficiency Low forward voltage drop High forward surge capability High frequency operation 2 2 Solder bath temperature 275 C maximum, 10 s, per 1 MBR745 JESD 22-B106 1 MBR760 MBRF745 Material categorization: for definitions of compliance PIN 1 PIN 1 please see www.vishay.com/doc 99912 CASE PIN 2 PIN 2 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, and polarity protection application. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: TO-220AC, ITO-220AC I 7.5 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 45 V, 60 V RRM Base P/N-E3 - RoHS-compliant, commercial grade I 150 A FSM Terminals: matte tin plated leads, solderable per V 0.57 V, 0.65 V F J-STD-002 and JESD 22-B102 T max. 150 C E3 suffix meets JESD 201 class 1A whisker test J Package TO-220AC, ITO-220AC Polarity: as marked Diode variations Single Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR745 MBR760 UNIT Maximum repetitive peak reverse voltage V 45 60 RRM Working peak reverse voltage V 45 60 V RWM Maximum DC blocking voltage V 45 60 DC Maximum average forward rectified current (fig. 1) I 7.5 F(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed I 150 A FSM on rated load Peak repetitive reverse surge current at t = 2.0 s, 1 kHz I 1.0 0.5 p RRM Voltage rate of change (rated V ) dV/dt 10 000 R Operating junction temperature range T -65 to +150 J C Operating storage temperature range T -65 to +175 STG Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min V 1500 V AC Revision: 27-Nov-17 Document Number: 88680 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 MBR745, MBR760, MBRF745 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MBR745 MBR760 UNIT I = 7.5 A T = 25 C - 0.75 F C I = 7.5 A T = 125 C 0.57 0.65 F C (1) Maximum instantaneous forward voltage V V F I = 15 A T = 25 C 0.84 - F C I = 15 A T = 125 C 0.72 - F C T = 25 C 0.1 0.5 C Maximum reverse current at (2) I Rated V mA R R DC blocking voltage T = 125 C 15 50 C Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR MBRF UNIT Typical thermal resistance from junction to case R 3.0 5.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE (1) TO-220AC MBR745-E3/45 1.80 45 50/tube Tube ITO-220AC MBRF745-E3/45 1.94 45 50/tube Tube Note (1) 60 V device available in TO-220AC package only Revision: 27-Nov-17 Document Number: 88680 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000