VSB3200 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses TMBS High efficiency operation Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 DO-201AD TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. PRIMARY CHARACTERISTICS MECHANICAL DATA I 3.0 A F(AV) Case: DO-201AD V 200 V RRM Molding compound meets UL 94 V-0 flammability rating I 90 A FSM Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade V at I = 3.0 A 0.63 V F F Terminals: Matte tin plated leads, solderable per T max. 150 C J J-STD-002 and JESD 22-B102 Package DO-201AD M3 suffix meets JESD 201 class 1A whisker test Diode variation Single Polarity: Color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VSB3200 UNIT Max. repetitive peak reverse voltage V 200 V RRM (1) Max. average forward rectified current (fig. 1) I 3.0 A F(AV) Peak forward surge current 8.3 ms single half I 90 A FSM sine-wave superimposed on rated load Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T - 40 to + 150 C J STG Note (1) Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375 (9.5 mm) lead length, free air Revision: 14-Aug-13 Document Number: 89144 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VSB3200 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 1.0 mA T = 25 C V 200 (minimum) - R A BR V T = 25 C 0.86 1.20 A (1) Instantaneous forward voltage I = 3.0 A V F F T = 125 C 0.63 0.71 A T = 25 C 1.6 60 A A (2) Reverse current per diode V = 200 V I R R T = 125 C 1.2 9 mA A Typical juntion capacitance 4.0 V, 1 MHz C 175 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VSB3200 UNIT R 62 JA (1) Typical thermal resistance C/W R 9 JL Note (1) Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375 (9.5 mm) lead length, free air ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSB3200-M3/54 1.08 54 1400 13 diameter paper tape and reel VSB3200-M3/73 1.08 73 1000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 3.5 2.4 D = 0.8 Resistive or Inductive Load D = 0.5 D = 0.3 3.0 2.0 D = 0.2 2.5 1.6 D = 0.1 D = 1.0 2.0 1.2 1.5 T 0.8 1.0 0.4 0.5 D = t /T t p p 0.375 (9.5 mm) Lead Length 0 0 25 50 75 175 030.5 1.0 1.5 2.0 2.5 3.0.5 0 100 125 150 Lead Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 14-Aug-13 Document Number: 89144 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)