VS-C4PH6006L-N3 www.vishay.com Vishay Semiconductors Hyperfast Soft Recovery Diode, 2 x 30 A FRED Pt Gen 4 Base FEATURES common cathode Gen 4 FRED Pt technology 2 Low I and reverse recovery charge RRM Very low forward voltage drop 1 Polyimide passivated chip for high reliability 2 standard 3 175 C operating junction temperature TO-247AD 3L 13 Designed and qualified according to JEDEC -JESD 47 Anode Anode Material categorization: for definitions of compliance 1 2 please see www.vishay.com/doc 99912 DESCRIPTION PRIMARY CHARACTERISTICS Gen 4 Fred technology, state of the art, ultralow V , soft F I 2 x 30 A F(AV) switching optimized for Discontinuous (Critical) Mode (DCM) V 600 V R and IGBT F/W diode. V at I 1.37 V F F The minimized conduction loss, optimized stored charge t typ. see Recovery table rr and low recovery current minimized the switching losses T max. 175 C and reduce over dissipation in the switching element and J snubbers. Package TO-247AD 3L Circuit configuration Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Cathode to anode voltage V 600 V R Average rectified forward current I T = 122 C 30 F(AV) C A Non-repetitive peak surge current, per leg I T = 25 C, t = 8.3 ms, half sine wave 240 FSM C p Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 600 - - BR R R I = 30 A - 1.65 2 F I = 60 A - 1.95 - F I = 30 A, T = 125 C - 1.44 - V F J Forward voltage V F I = 60 A, T = 125 C - 1.78 - F J I = 30 A, T = 150 C - 1.37 1.6 F J I = 60 A, T = 150 C - 1.68 - F J V = V rated - - 50 R R Reverse leakage current I A R T = 125 C, V = V rated - - 500 J R R Junction capacitance C V = 600 V - 18.3 - pF T R Revision: 19-Feb-2019 Document Number: 95949 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-C4PH6006L-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS T = 25 C -55- J Reverse recovery time t ns rr T = 125 C - 75 - J I = 30 A F T = 25 C - 13 - J Peak recovery current I dI /dt = 1000 A/s A RRM F T = 125 C - 23 - J V = 400 V R T = 25 C - 500 - J Reverse recovery charge Q nC rr T = 125 C - 1250 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, junction to case R --1 thJC Thermal resistance, junction to ambient R Typical socket mount - - 40 C/W thJA Thermal resistance, case to heat sink R Mounting surface, flat, smooth, and greased - 0.4 - thCS -6.0 - g Weight -0.21- oz. 6.0 12 kgf cm Mounting torque - (5) (20) (lbf in) Marking device Case style TO-247AD 3L C4PH6006L 1000 1000 175 C 150 C 100 125 C 100 10 1 T = 175 C J 25 C 10 0.1 T = 150 C J 0.01 T = 125 C J T = 25 C J 1 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 400 600 V -Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 19-Feb-2019 Document Number: 95949 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R