VS-CPU6006-N3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 x 30 A FRED Pt FEATURES Base common Ultrafast recovery time cathode Low forward voltage drop 2 175 C operating junction temperature 1 Designed and qualified according to 2 JEDEC -JESD 47 3 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TO-247AC 3L Anode 1 Anode 2 13 DESCRIPTIONS/APPLICATIONS VS-CPU60... series are the state of the art ultrafast recovery PRIMARY CHARACTERISTICS rectifiers designed with optimized performance of forward I 2 x 30 A voltage drop and ultrafast recovery time. F(AV) The planar structure and the platinum doped life time control V 600 V R guarantee the best overall performance, ruggedness and V at I 1.75 V F F reliability characteristics. t typ. 26 ns rr These devices are intended for use in the output rectificatio n stage of SMPS, UPS, DC/DC converters as well as T max. 175 C J freewheeling diodes in low voltage inverters and choppe r Package TO-247AC 3L motor drives. Circuit configuration Common cathode Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX.UNITS Repetitive peak reverse voltage V 600 V RRM Average rectified forward current I T = 131 C 60 F(AV) C A Non-repetitive peak surge current per leg I T = 25 C, t = 10 ms 250 FSM J p Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R V blocking voltage R V I = 30 A - 1.4 1.75 F Forward voltage V F I = 30 A, T = 150 C -1.1 1.4 F J V = V rated -0.02 30 R R Reverse leakage current I A R T = 150 C, V = V rated - 30 200 J R R Junction capacitance C V = 600 V -20- pF T R Revision: 09-Oct-2019 Document Number: 94795 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-CPU6006-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V -26 34 F F R Reverse recovery time t T = 25 C -42- ns rr J T = 125 C - 100 - J I = 30 A T = 25 C F -5- J Peak recovery current I dI /dt = - 200 A/s A RRM F T = 125 C -10- J V = 200 V R T = 25 C - 125 - J Reverse recovery charge Q nC rr T = 125 C - 580 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -0.7 1 thJC junction to case per leg Thermal resistance, R Typical socket mount - - 70 C/W thJA junction to ambient per leg Thermal resistance, R Mounting surface, flat, smooth, and greased - 0.5 - thCS case to heatsink -6.0 - g Weight -0.21 - oz. 6.0 12 kgf cm Mounting torque - (lbf in) (5.0) (10) Marking device Case style TO-247AC 3L CPU6006 Revision: 09-Oct-2019 Document Number: 94795 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000