VSB2045Y-M3 www.vishay.com Vishay General Semiconductor Photovoltaic Solar Cell Protection Schottky Rectifier Ultra Low V = 0.30 V at I = 5.0 A F F FEATURES Trench MOS Schottky technology TMBS Low forward voltage drop, low power losses High efficiency operation High forward surge capability ESD capability P600 High junction temperature 230 C maximum at DC forward current Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS I 20 A F(AV) For use in solar cell junction box as a bypass diode for V 45 V RRM protection, using DC forward current without reverse bias. I 250 A FSM V at I = 20 A 0.42 V F F MECHANICAL DATA T max. (AC mode) 150 C OP Case: P600 T max. (DC forward current) 230 C J Molding compound meets UL 94 V-0 flammability rating Package P600 Base P/N-M3 - halogen-free, RoHS-compliant, and Diode variation Single die commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VSB2045Y UNIT Device marking code V2045Y Maximum repetitive peak reverse voltage V 45 V RRM (1) I 20 F(DC) Maximum average forward rectified current (fig. 1) A (2) I 6.5 F(DC) Peak forward surge current 8.3 ms single half I 250 A FSM sine-wave superimposed on rated load Operating junction temperature range T -40 to +150 C OP Storage temperature range T -40 to +175 C STG Junction temperature in DC forward current (1) T 230 C J without reverse bias, t 1 h Notes (1) With heatsink (2) Without heatsink, free air Revision: 04-Dec-13 Document Number: 89960 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VSB2045Y-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5.0 A 0.44 - F I = 10 A T = 25 C 0.46 - F A I = 20 A 0.50 0.58 F (1) Instantaneous forward voltage V V F I = 5.0 A 0.30 - F I = 10 A T = 125 C 0.35 - F A I = 20 A 0.42 0.50 F T = 25 C 23.4 1200 A A (2) Reverse current V = 45 V I R R T = 125 C 11.9 35 mA A Typical junction capacitance 4.0 V, 1 MHz C 2050 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: 40 ms pulse width THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VSB2045Y UNIT (1) R 55 JA Thermal resistance C/W (1) R 3.5 JL (2) Typical thermal resistance R 2.5 C/W JL Notes (1) Without heatsink, free air units mounted on PCB with 2 mm x 2 mm copper pad areas at 9.5 mm lead length (2) Leads clipped at 3 mm lead length from plastic body on 7.0 cm x 2.2 cm x 1.9 cm x 2 heatsink IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS (T = 25 C unless otherwise noted) A STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE JESD22-A114 Human body model (contact mode) C = 150 pF, R = 1.5 3B > 8 kV V JESD22-A115 Machine model (contact mode) C = 200 pF, R = 0 C C > 400 V (2) (1) IEC 61000-4-2 Human body model (air discharge mode) C = 150 pF, R = 330 4> 15 kV Notes (1) Immunity to IEC 61000-4-2 air discharge mode has a typical performance > 25 kV (2) System ESD standard ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSB2045Y-M3/54 1.88 54 800 13 diameter paper tape and reel VSB2045Y-M3/73 1.88 73 300 Ammo pack packaging Revision: 04-Dec-13 Document Number: 89960 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000