VSB1045-E3 www.vishay.com Vishay General Semiconductor Low Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.30 V at I = 5 A F F FEATURES Trench MOS Schottky technology TMBS Low forward voltage drop, low power losses High efficiency operation High forward surge capability Solder dip 275 C max. 10 s, per JESD 22-B106 DO-201AD Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATION For use in low voltage high frequency inverters, PRIMARY CHARACTERISTICS freewheeling, DC/DC converters and polarity protection I 10 A F(AV) applications. V 45 V RRM MECHANICAL DATA I 160 A FSM V at I = 10 A 0.33 V F F Case: DO-201AD Molding compound meets UL 94 V-0 flammability rating T max. 150 C J Base P/N-E3 - RoHS-compliant, commercial grade Package DO-201AD Terminals: Matte tin plated leads, solderable per Diode variations Single die J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VSB1045 UNIT Device marking code V1045 Maximum repetitive peak reverse voltage V 45 V RRM (1) I 10 F(DC) Maximum DC forward current (fig. 1) A (2) I 7.0 F(DC) Peak forward surge current 8.3 ms single half I 160 A FSM sine-wave superimposed on rated load Operating junction and storage temperature range T , T -40 to +150 C J STG Notes (1) With heatsink (2) Without heatsink, free air Revision: 22-Apr-14 Document Number: 89488 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VSB1045-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONSSYMBOLTYP. MAX.UNIT I = 5.0 A 0.42 - F T = 25 C A I = 10 A 0.46 0.56 F (1) Instantaneous forward voltage V V F I = 5.0 A 0.30 - F T = 125 C A I = 10 A 0.33 0.41 F T = 25 C - 1000 A A (2) Reverse current V = 45 V I R R T = 125 C 13.8 30 mA A Typical junction capacitance 4.0 V, 1 MHz C 1995 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: 40 ms pulse width THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VSB1045 UNIT (1) R 45 JA Thermal resistance (1) R 9 JL C/W (2) Typical thermal resistance R 4 JL Notes (1) Without heatsink, free air units mounted on PCB with 2 mm x 2 mm copper pad areas at 9.5 mm lead length (2) Leads clipped at 3 mm lead length from plastic body on 7.0 cm x 2.2 cm x 1.9 cm x 2 heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSB1045-E3/54 1.20 54 1400 13 diameter paper tape and reel VSB1045-E3/73 1.20 73 1000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A Notes 12 (1) Free air mounted on recommended copper pad area With heatsink T = 132 C 11 L (R = 45 C/W) JA 10 (2) With heatsink (R = 4 C/W) JL 9 8 T = 25 C A 7 6 5 Free air 4 without heatsink 3 2 1 0 025 50 75 100 125 150 T - Ambient Temperature (C) A Fig. 1 - Forward Current Derating Curve Revision: 22-Apr-14 Document Number: 89488 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DC Forward Current (A)