VS-MBR16...PbF Series, VS-MBR16...-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 16 A FEATURES Base 150 C T operation J cathode 2 Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical 1 3 strength and moisture resistance Cathode Anode TO-220AC Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Designed and qualified according to JEDEC-JESD47 Package TO-220AC Halogen-free according to IEC 61249-2-21 definition I 16 A F(AV) (-N3 only) V 35 V, 45 V R V at I 0.57 V F F DESCRIPTION I max. 40 mA at 125 C The VS-MBR16... Schottky rectifier has been optimized for RM low reverse leakage at high temperature. The proprietary T max. 150 C J barrier technology allows for reliable operation up to 150 C Diode variation Single die junction temperature. Typical applications are in switching E 24 mJ power supplies, converters, freewheeling diodes, and AS reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 16 A F(AV) V 35/45 V RRM I t = 5 s sine 1800 A FSM p V 16 A , T = 125 C 0.57 V F pk J T Range - 65 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-MBR1635PbFVS-MBR1635-N3 VS-MBR1645PbF VS-MBR1645-N3 UNITS Maximum DC reverse V R voltage 35 35 45 45 V Maximum working peak V RWM reverse voltage ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 134 C, rated V 16 A F(AV) C R Following any rated load 5 s sine or 3 s rect. pulse condition and with rated 1800 V applied RRM Non-repetitive peak surge current I A FSM Surge applied at rated load condition half wave 150 single phase, 60 Hz Non-repetitive avalanche energy E T = 25 C, I = 3.6 A, L = 3.7 mH 24 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 3.6 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 29-Aug-11 Document Number: 94286 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-MBR16...PbF Series, VS-MBR16...-N3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS T = 25 C 0.63 J (1) Maximum forward voltage drop V 16 A V FM T = 125 C 0.57 J T = 25 C 0.2 J (1) Maximum instantaneous reverse current I Rated DC voltage mA RM T = 125 C 40 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 1400 pF T R DC Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction temperature range T - 65 to 150 J C Maximum storage temperature range T - 65 to 175 Stg Maximum thermal resistance, R DC operation 1.50 thJC junction to case C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) MBR1635 Marking device Case style TO-220AC (JEDEC) MBR1645 Revision: 29-Aug-11 Document Number: 94286 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000