VS-MBRB20...CTHM3, VS-MBR20...CT-1HM3
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Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 10 A
2 FEATURES
TO-263AB (D PAK) TO-262AA
150 C T operation
J
Low forward voltage drop
High frequency operation
2
Center tap D PAK and TO-262 packages
Base Base
High purity, high temperature epoxy
common common
encapsulation for enhanced mechanical
cathode cathode
2 2 strength and moisture resistance
Guard ring for enhanced ruggedness and long term
reliability
Meets MSL level 1, per J-STD-020, LF maximum peak
2 2
of 260 C
1 1
3 3
Common Common
Anode cathode Anode Anode Anode
cathode
AEC-Q101 qualified, meets JESD 201 class 1 whisker test
VS-MBR20 ...CT-1HM3
VS-MBRB20...CTHM3
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
DESCRIPTION
2
Package TO-263AB (D PAK), TO-262AA
This center tap Schottky rectifier has been optimized for low
I 2 x 10 A
F(AV)
reverse leakage at high temperature. The proprietary barrier
V 80 V, 100 V
R
technology allows for reliable operation up to 150 C
V at I 0.70 V
junction temperature. Typical applications are in switching
F F
power supplies, converters, freewheeling diodes, and
I 6 mA at 125 C
RM
reverse battery protection.
T max. 150 C
J
Diode variation Common cathode
E 24 mJ
AS
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Rectangular waveform (per device) 20
F(AV)
A
I T = 133 C (per leg) 20
FRM C
V 80 to 100 V
RRM
I t = 5 s sine 850 A
FSM p
V 10 A , T = 125 C 0.70 V
F pk J
T Range -55 to +150 C
J
VOLTAGE RATINGS
VS-MBRB2080CTHM3 VS-MBRB2090CTHM3 VS-MBRB20100CTHM3
PARAMETER SYMBOL UNITS
VS-MBR2080CT-1HM3 VS-MBR2090CT-1HM3 VS-MBR20100CT-1HM3
Maximum DC reverse voltage V
R
80 90 100 V
Maximum working peak reverse voltage V
RWM
Revision: 03-Mar-15 Document Number: 95859
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-MBRB20...CTHM3, VS-MBR20...CT-1HM3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
per leg 10
Maximum average
I T = 133 C, rated V
F(AV) C R
forward current
per device 20
Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 133 C 20
FRM R C
5 s sine or Following any rated load condition
A
850
3 s rect. pulse and with rated V applied
RRM
Non-repetitive peak surge current I
FSM
Surge applied at rated load conditions half wave,
150
single phase, 60 Hz
Peak repetitive reverse surge current I 2.0 s, 1.0 kHz 0.5
RRM
Non-repetitive avalanche energy per leg E T = 25 C, I = 2 A, L = 12 mH 24 mJ
AS J AS
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
10 A 0.80
T = 25 C
J
20 A 0.95
(1)
Maximum forward voltage drop V V
FM
10 A 0.70
T = 125 C
J
20 A 0.85
T = 25 C 0.10
J
(1)
Maximum instantaneous reverse current I Rated DC voltage mA
RM
T = 125 C 6
J
Threshold voltage V 0.433 V
F(TO)
T = T maximum
J J
Forward slope resistance r 15.8 m
t
Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 400 pF
T R DC
Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V 10 000 V/s
R
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T -55 to +150
J
C
Maximum storage temperature range T -65 to +150
Stg
Maximum thermal resistance,
R DC operation 2.0
thJC
junction to case per leg
Typical thermal resistance,
R Mounting surface, smooth and greased 0.50 C/W
thCS
case to heatsink
Maximum thermal resistance,
R DC operation 50
thJA
junction to ambient
2g
Approximate weight
0.07 oz.
minimum 6 (5)
kgf cm
Mounting torque Non-lubricated threads
(lbf in)
maximum 12 (10)
MBRB2090CTH
2
Case style D PAK MBRB2080CTH
MBRB20100CTH
Marking device
MBR2090CT-1H
Case style TO-262 MBR2080CT-1H
MBR20100CT-1H
Revision: 03-Mar-15 Document Number: 95859
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000