VS-MBRB20..CT-M3, VS-MBR20..CT-1-M3
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Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 10 A
FEATURES
150 C T operation
J
2
Center tap D PAK (TO-263AB) and TO-262AA
packages
2
Low forward voltage drop
1
1 High frequency operation
3
2
High purity, high temperature epoxy encapsulation for
2
D PAK (TO-263AB) 3 TO-262AA
enhanced mechanical strength and moisture resistance
Base Base
Guard ring for enhanced ruggedness and long term
common common
cathode cathode
reliability
2 2
Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 C
Designed and qualified according to JEDEC -JESD 47
Material categorization: for definitions of compliance
2 2
1 1
3 3
Common Common
please see www.vishay.com/doc?99912
Anode cathode Anode Anode Anode
cathode
VS-MBR20..CT-1-M3 DESCRIPTION
VS-MBRB20..CT-M3
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
PRIMARY CHARACTERISTICS technology allows for reliable operation up to 150 C
junction temperature. Typical applications are in switching
I 2 x 10 A
F(AV)
power supplies, converters, freewheeling diodes, and
V 35 V, 45 V
R
reverse battery protection.
V at I 0.72 V
F F
I max. 15 mA at 125 C
RM
T max. 150 C
J
E 8 mJ
AS
2
Package D PAK (TO-263AB), TO-262AA
Circuit configuration Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Rectangular waveform (per device) 20
F(AV)
A
I T = 135 C (per leg) 20
FRM C
V 35/45 V
RRM
I t = 5 s sine 1060 A
FSM p
V 10 A , T = 125 C 0.57 V
F pk J
T Range -65 to +150 C
J
VOLTAGE RATINGS
VS-MBRB2035CT-M3 VS-MBRB2045CT-M3
PARAMETER SYMBOL UNITS
VS-MBR2035CT-1-M3 VS-MBR2045CT-1-M3
Maximum DC reverse voltage V
R
35 45 V
Maximum working peak reverse voltage V
RWM
Revision: 03-Nov-17 Document Number: 96405
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-MBRB20..CT-M3, VS-MBR20..CT-1-M3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
per leg 10
Maximum average
I T = 135 C, rated V
F(AV) C R
forward current
per device 20
Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 135 C 20
FRM R C
A
5 s sine or Following any rated load condition
1060
3 s rect. pulse and with rated V applied
RRM
Non-repetitive peak surge current I
FSM
Surge applied at rated load conditions halfwave,
150
single phase, 60 Hz
Non-repetitive avalanche energy per leg E T = 25 C, I = 2 A, L = 4 mH 8 mJ
AS J AS
Current decaying linearly to zero in 1 s
Repetitive avalanche current per leg I Frequency limited by T maximum 2A
AR J
V = 1.5 x V typical
A R
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
20 A T = 25 C 0.84
J
(1)
Maximum forward voltage drop V 10 A 0.57 V
FM
T = 125 C
J
20 A 0.72
T = 25 C 0.1
Maximum instantaneous J
(1)
I Rated DC voltage mA
RM
reverse current
T = 125 C 15
J
Threshold voltage V 0.354 V
F(TO)
T = T maximum
J J
Forward slope resistance r 17.6 m
t
Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 600 pF
T R DC
Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V 10 000 V/s
R
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T -65 to 150
J
C
Maximum storage temperature range T -65 to 175
Stg
Maximum thermal resistance,
R DC operation 2.0
thJC
junction to case per leg
C/W
Typical thermal resistance,
R Mounting surface, smooth and greased 0.50
thCS
case to heatsink
2g
Approximate weight
0.07 oz.
minimum 6 (5)
kgf cm
Mounting torque Non-lubricated threads
(lbf in)
maximum 12 (10)
MBRB2035CT
2
Case style D PAK (TO-263AB)
MBRB2045CT
Marking device
MBR2035CT-1
Case style TO-262AA
MBR2045CT-1
Revision: 03-Nov-17 Document Number: 96405
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000