VS-MBR2535CT-M3, VS-MBR2545CT-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A FEATURES Base 2 common 150 C T operation J cathode Low forward voltage drop High frequency operation High purity, high temperature epoxy 1 encapsulation for enhanced mechanical 2 Anode 2 Anode strength and moisture resistance 13Common 3 Guard ring for enhanced ruggedness and long term 3L TO-220AB cathode reliability Designed and qualified according to JEDEC -JESD 47 PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance I 2 x 15 A F(AV) please see www.vishay.com/doc 99912 V 35 V, 45 V R V at I See Electrical table F F DESCRIPTION This center tap Schottky rectifier has been optimized for low I max. 40 mA at 125 C RM reverse leakage at high temperature. The proprietary barrier T max. 150 C J technology allows for reliable operation up to 150 C E 16 mJ AS junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and Package 3L TO-220AB reverse battery protection. Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform (per device) 30 A F(AV) V 35/45 V RRM I T = 130 C (per leg) 30 FRM C A I t = 5 s sine 1060 FSM p V 30 A , T = 125 C 0.73 V F pk J T Range -65 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-MBR2535CT-M3 VS-MBR2545CT-M3UNITS Maximum DC reverse voltage V R 35 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 15 Maximum average forward I T = 130 C, rated V F(AV) C R current per device 30 Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 130 C 30 FRM R C A Following any rated load 5 s sine or 3 s rect. pulse condition and with rated V 1060 RRM applied Non-repetitive peak surge current I FSM Surge applied at rated load conditions halfwave, 150 single phase, 60 Hz Non-repetitive avalanche energy per leg E T = 25 C, I = 2 A, L = 8 mH 16 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 18-Aug-17 Document Number: 96284 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-MBR2535CT-M3, VS-MBR2545CT-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS T = 25 C 0.82 J (1) Maximum forward voltage drop V 30 A V FM T = 125 C 0.73 J T = 25 C 0.2 J (1) Maximum instantaneous reverse current I Rated DC voltage mA RM T = 125 C 40 J Threshold voltage V 0.355 V F(TO) T = T maximum J J Forward slope resistance r 12.3 m t Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 700 pF T R DC Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T -65 to +150 J C Maximum storage temperature range T -65 to +175 Stg Maximum thermal resistance, R DC operation 1.5 thJC junction to case per leg C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) MBR2535CT Marking device Case style 3L TO-220AB MBR2545CT Revision: 18-Aug-17 Document Number: 96284 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000