MBR1045CTHC0 Taiwan Semiconductor

MBR1035CT - MBR10200CT Taiwan Semiconductor CREAT BY ART 10A, 35V - 200V Dual Common Cathode Schottky Rectifiers FEATURES - Low power loss, high efficiency - Guard ring for over-voltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA Case: TO-220AB TO-220AB Molding compound, UL flammability classification rating 94V-0 Part No. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 0.56 Nm max. Weight: 1.88 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A MBR MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL 1035 1045 1050 1060 1090 10100 10150 10200 UNIT CT CT CT CT CT CT CT CT Maximum repetitive peak reverse voltage V 35 45 50 60 90 100 150 200 V RRM Maximum RMS voltage V 24 31 35 42 63 70 105 140 V RMS Maximum DC blocking voltage V 35 45 50 60 90 100 150 200 V DC Maximum average forward rectified current I 10 A F(AV) Peak repetitive forward current I 10 A FRM (Rated V , Square Wave, 20KHz) R Peak forward surge current, 8.3 ms single half sine-wave I 120 A FSM superimposed on rated load Peak repetitive reverse surge current (Note 1) I10.5 A RRM Maximum instantaneous forward voltage (Note 2) I = 5 A, T =25C 0.70 0.80 0.85 0.88 F J I = 5 A, T =125C V 0.57 0.65 0.75 0.78 V F J F I = 10 A, T =25C F J 0.80 0.90 0.95 0.98 I = 10 A, T =125C F J 0.67 0.85 0.75 0.88 T =25C 0.1 J Maximum reverse current rated V I mA R R T =125C 15 10 2 5 J Voltage rate of change (Rated V ) 10000 dV/dt V/s R Typical thermal resistance R 1.5 C/W JC T Operating junction temperature range - 55 to +150 C J Storage temperature range T - 55 to +150 C STG Note 1: tp = 2.0 s, 1.0KHz Note 2: Pulse test with PW=300s, 1% duty cycle Version: N1512MBR1035CT - MBR10200CT Taiwan Semiconductor ORDERING INFORMATION PACKING CODE PART NO. PACKING CODE PACKAGE PACKING PART NO. (*) SUFFIX SUFFIX MBR10xxCT H C0 G TO-220AB 50 / Tube (Note 1) Note 1:x defines voltage from 35V (MBR1035CT) to 200V (MBR10200CT) *: Optional available EXAMPLE EXAMPLE PART NO. PACKING CODE PART NO. PACKING CODE DESCRIPTION PART NO. SUFFIX SUFFIX AEC-Q101 qualified MBR1060CTHC0G MBR1060CT H C0 G Green compound RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 180 12 150 10 8.3ms single half sine wave 120 8 6 90 4 60 Resistive or inductive load 2 30 with heat sink 0 0 0 50 100 150 1 10 100 NUMBER OF CYCLES AT 60 Hz CASE TEMPERATURE ( C) FIG. 4 TYPICAL REVERSE CHARACTERISTICS FIG. 3 TYPICAL FORWARD CHARACTERISTICS 100 1000 Pulse width=300s 1% duty cycle 10 T =125C 100 J MBR1050CT-1060CT 1 10 T =75C J MBR1035CT-1045CT 0. 1 MBR1090CT-10100CT 1 MBR10150-10200CT 0. 01 T =25C J 0. 001 0. 1 0 20 40 60 80 100 120 140 0. 2 0.4 0. 6 0.8 1 1.2 1. 4 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: N1512 AVERAGE FORWARD A INSTANTANEOUS FORWARD CURRENT (A) CURRENT (A) PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA)