MBR15100CT C0 Taiwan Semiconductor

MBR1035CT MBR10200CT Taiwan Semiconductor 10A, 35V - 200V Schottky Barrier Rectifier FEATURES KEY PARAMETERS AEC-Q101 qualified available PARAMETER VALUE UNIT Low power loss, high efficiency I 10 A F Guard ring for overvoltage protection V 35 - 200 V RRM High surge current capability RoHS Compliant I 120 A FSM Halogen-free according to IEC 61249-2-21 T 150 C J MAX Package TO-220AB APPLICATIONS Configuration Dual dies Switching mode power supply (SMPS) Adapters DC to DC converters MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.88g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A MBR MBR MBR MBR MBR MBR MBR MBR 1035 1045 1050 1060 1090 10100 10150 10200 PARAMETER SYMBOL UNIT CT CT CT CT CT CT CT CT MBR MBR MBR MBR MBR MBR MBR MBR Marking code on the 1035 1045 1050 1060 1090 10100 10150 10200 device CT CT CT CT CT CT CT CT Repetitive peak V 35 45 50 60 90 100 150 200 V RRM reverse voltage Reverse voltage, total V 24 31 35 42 63 70 105 140 V R(RMS) rms value Forward current I 10 A F Surge peak forward current, 8.3ms single half sine wave I 120 A FSM superimposed on rated load Peak repetitive reverse (1) I 1 0.5 A RRM surge current Peak repetitive forward current (Rated V , I 10 A R FRM Square wave, 20KHz) 1 Version: O2104 MBR1035CT MBR10200CT Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A MBR MBR MBR MBR MBR MBR MBR MBR 1035 1045 1050 1060 1090 10100 10150 10200 PARAMETER SYMBOL UNIT CT CT CT CT CT CT CT CT Critical rate of rise of off- dv/dt 10,000 V/s state voltage Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG Notes: 1. tp = 2.0s, 1.0KHz THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case thermal resistance R 1.5 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT MBR1035CT - 0.70 V MBR1045CT MBR1050CT - 0.80 V MBR1060CT I = 5A, T = 25C F J MBR1090CT - 0.85 V MBR10100CT MBR10150CT - 0.88 V MBR10200CT MBR1035CT - 0.80 V MBR1045CT MBR1050CT - 0.90 V MBR1060CT I = 10A, T = 25C F J MBR1090CT - 0.95 V MBR10100CT MBR10150CT - 0.98 V MBR10200CT Forward voltage per V (1) F diode MBR1035CT - 0.57 V MBR1045CT MBR1050CT - 0.65 V MBR1060CT I = 5A, T = 125C F J MBR1090CT - 0.75 V MBR10100CT MBR10150CT - 0.78 V MBR10200CT MBR1035CT - 0.67 V MBR1045CT MBR1050CT - 0.75 V MBR1060CT I = 10A, T = 125C F J MBR1090CT - 0.85 V MBR10100CT MBR10150CT - 0.88 V MBR10200CT 2 Version: O2104