MBR1560CT C0 Taiwan Semiconductor

MBR1535CT thru MBR15150CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-220AB MECHANICAL DATA Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix on packing code - halogen-free Base P/N with prefix on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.88 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL 1535 1545 1550 1560 1590 15100 15150 UNIT CT CT CT CT CT CT CT Maximum repetitive peak reverse voltage V 35 45 50 60 90 100 150 V RRM Maximum RMS voltage V 24 31 35 42 63 70 105 V RMS Maximum DC blocking voltage V 35 45 50 60 90 100 150 V DC Maximum average forward rectified current I 15 A F(AV) Peak repetitive forward current I 15 A FRM (Rated VR, Square wave, 20KHz) Peak forward surge current, 8.3 ms single half sine-wave I 150 A FSM superimposed on rated load Peak repetitive reverse surge current (Note 1) I 1 0.5 A RRM Maximum instantaneous forward voltage (Note 2) I =7.5A, T =25 - 0.75 0.92 1.05 F J I =7.5A, T =125 V F J 0.57 0.65 0.82 0.92 V F I =15A, T =25 F J 0.84 -- - I =15A, T =125 F J 0.72 - - - Maximum reverse current rated VR T =25 0.5 0.3 0.1 J I mA R T =125 J 10 7.5 5.0 Voltage rate of change (Rated V ) dV/dt 10000 V/s R R 1.5 JC O Typical thermal resistance C/W R 10 JA O Operating junction temperature range T - 55 to +150 J C O Storage temperature range T - 55 to +150 STG C Note 1: tp = 2.0 s, 1.0KHz Note 2: Pulse test with PW=300s, 1% duty cycle Document Number: DS D1308062 Version: H13MBR1535CT thru MBR15150CT Taiwan Semiconductor ORDERING INFORMATION AEC-Q101 PACKING GREEN COMPOUND PACKAGE PACKING PART NO. CODE QUALIFIED CODE MBR15xxCT Prefix C0 Suffix TO-220AB 50 / Tube (Note 1) Note 1:x defines voltage from 35V (MBR1535CT) to 150V (MBR15150CT) EXAMPLE AEC-Q101 GREEN COMPOUND PREFERRED P/N PACKING CODE DESCRIPTION PART NO. QUALIFIED CODE MBR1560CT C0 C0 MBR1560CT MBR1560CT C0G C0 G Green compound MBR1560CT MBR1560CTHC0 MBR1560CT H C0 AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG.1- FORWARD CURRENT DERATING CURVE FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 20 300 8.3ms Single Half Sine Wave 250 15 JEDEC Method 200 10 150 100 5 RESISTIVE OR INDUCTIVELOAD 50 WITH HEATSINK 0 0 0 50 100 150 1 10 100 o CASE TEMPERATURE ( C) NUMBER OF CYCLES AT 60 Hz FIG. 4- TYPICAL REVERSE CHARACTERISTICS FIG.3- TYPICAL INSTANTANEOUS FORWARD PER LEG CHARACTERISTICS PER LEG 100 100 10 TJ=125 10 TJ=125 MBR15150CT 1 1 TJ=25 0. 1 TJ=75 Pulse Width=300s MBR1535CT-MBR1545CT 1% Duty Cycle 0. 1 MBR1550CT-MBR15150CT 0. 01 MBR1535CT-MBR1545CT MBR1550CT-MBR1560CT TJ=25 MBR1590CT-MBR15100CT 0. 001 0. 01 0 20 40 60 80 100 120 140 0 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6 0. 7 0. 8 0. 9 1 1. 1 1. 2 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS D1308062 Version: H13 AVERAGE FORWARD A INSTANTANEOUS FORWARD CURRENT (A) CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) PEAK FORWARD SURGE CURRENT (A)