MBR1060 Taiwan Semiconductor

MBR1035 MBR10200 Taiwan Semiconductor 10A, 35V - 200V Schottky Barrier Rectifier FEATURES KEY PARAMETERS AEC-Q101 qualified available PARAMETER VALUE UNIT Low power loss, high efficiency I 10 A F Guard ring for overvoltage protection V 35 - 200 V RRM High surge current capability RoHS Compliant I 150 A FSM Halogen-free according to IEC 61249-2-21 T 150 C J MAX Package TO-220AC APPLICATIONS Configuration Single die Switching mode power supply (SMPS) Adapters DC to DC converters MECHANICAL DATA Case: TO-220AC Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.88g (approximately) TO-220AC ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A MBR MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL UNIT 1035 1045 1050 1060 1090 10100 10150 10200 Marking code on the MBR MBR MBR MBR MBR MBR MBR MBR device 1035 1045 1050 1060 1090 10100 10150 10200 Repetitive peak reverse V 35 45 50 60 90 100 150 200 V RRM voltage Reverse voltage, total rms V 24 31 35 42 63 70 105 140 V R(RMS) value Forward current I 10 A F Surge peak forward current 8.3ms single half sine I 150 A FSM wave superimposed on rated load Peak repetitive forward current I 20 A FRM (Rated V , Square Wave, R 20KHz) Peak repetitive reverse I 1 0.5 A (1) RRM surge current Voltage rate of change dV/dt 10,000 V/s (Rated V ) R 1 Version: M2103 MBR1035 MBR10200 Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A MBR MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL UNIT 1035 1045 1050 1060 1090 10100 10150 10200 Junction temperature T -55 to +150 C J Storage temperature T -55 to +175 C STG Notes: 1. tp = 2.0s, 1.0KHz THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case resistance R 3 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT MBR1035 - 0.70 V MBR1045 MBR1050 - 0.80 V MBR1060 I = 10A, T = 25C F J MBR1090 - 0.85 V MBR10100 MBR10150 - 1.05 V MBR10200 (1) Forward voltage V F MBR1035 - 0.57 V MBR1045 MBR1050 - 0.70 V MBR1060 I = 10A, T = 125C F J MBR1090 - 0.71 V MBR10100 MBR10150 - - V MBR10200 MBR1035 MBR1045 MBR1050 MBR1060 T = 25C - 100 A J MBR1090 MBR10100 MBR10150 (2) Reverse current rated V MBR1035 I R R - 15 mA MBR1045 MBR1050 - 10 mA MBR1060 T = 125C J MBR1090 MBR10100 - 6 mA MBR10150 MBR10200 Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms 2 Version: M2103