MBR12020CT GeneSiC Semiconductor

MBR12020CT thru MBR12040CTR V = 20 V - 40 V RRM Silicon Power I = 120 A F(AV) Schottky Diode Features High Surge Capability Twin Tower Package Types from 20 V to 40 V V RRM Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions MBR12020CT(R) MBR12030CT(R) MBR12035CT(R) MBR12040CT(R) Unit Repetitive peak V 20 30 35 40 V RRM reverse voltage V 25 28 RMS reverse voltage 14 21 V RMS V DC blocking voltage 20 30 35 40 V DC Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MBR12035CT(R) MBR12060CT(R) Parameter Symbol MBR12020CT(R) MBR12030CT(R) Unit Average forward T = 125 C I 120 120 120 120 A C F(AV) current (per pkg) Peak forward surge I t = 8.3 ms, half sine 800 800 800 800 A FSM p current (per leg) Maximum forward V I = 60 A, T = 25 C 0.70 0.70 V F FM j 0.70 0.70 voltage (per leg) T = 25 C 11 11 j Reverse current at I T = 100 C rated DC blocking 10 10 10 10 mA R j voltage (per leg) T = 150 C 30 30 30 30 j Thermal characteristics Thermal resistance, R 0.80 0.80 0.80 0.80 C/W JC junction-case, per leg 1 www.genesicsemi.com/silicon-products/schottky-rectifiers/MBR12020CT thru MBR12040CTR 2 www.genesicsemi.com/silicon-products/schottky-rectifiers/