MBR3045PTHC0 Taiwan Semiconductor

MBR3035PT thru MBR30200PT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-247AD (TO-3P) MECHANICAL DATA Case: TO-247AD (TO-3P) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix on packing code - halogen-free Base P/N with prefix on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 10 in-lbs maximum Weight: 6.1 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A MBR MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL 3035 3045 3050 3060 3090 30100 30150 30200 UNIT PT PT PT PT PT PT PT PT Maximum repetitive peak reverse voltage V 35 45 50 60 90 100 150 200 V RRM Maximum RMS voltage V 24 31 35 42 63 70 105 140 V RMS V Maximum DC blocking voltage 35 45 50 60 90 100 150 200 V DC Maximum average forward rectified current I 30 A F(AV) Peak repetitive forward current I 30 A FRM (Rated V , Square wave, 20KHz) R Peak forward surge current, 8.3 ms single half sine-wave I 200 A FSM superimposed on rated load Peak repetitive reverse surge Current (Note 1) I 2 1 A RRM Maximum instantaneous forward voltage (Note 2) - 0.75 0.85 I =15A, T =25 0.95 1.05 F J I =15A, T =125 V 0.60 0.65 0.75 V F J F 0.92 - I =30A, T =25 F J 0.82 -- 1.02 1.10 I =30A, T =125 F J 0.73 - - 0.98 - 10.5 0.1 Maximum reverse current rated VR T =25 J I mA R T =125 J 20 15 10 Voltage rate of change,(Rated V ) 10,000 R dV/dt V/s O Typical thermal resistance R 1.4 JC C/W O Operating junction temperature range T - 55 to +150 J C O Storage temperature range T - 55 to +150 C STG Note 1: 2.0s Pulse Width, f=1.0KHz Note 2: Pulse Test : 300s Pulse Width, 1% Duty Cycle Document Number: DS D1309029 Version: J13MBR3035PT thru MBR30200PT Taiwan Semiconductor ORDERING INFORMATION AEC-Q101 GREEN COMPOUND PACKING CODE PACKAGE PACKING PART NO. QUALIFIED CODE MBR30xxPT Prefix C0 Suffix TO-3P 30 / Tube (Note 1) Note 1:x defines voltage from 35V (MBR3035PT) to 200V (MBR30200PT) EXAMPLE AEC-Q101 GREEN COMPOUND PREFERRED P/N PACKING CODE DESCRIPTION PART NO. QUALIFIED CODE MBR3060PT C0 C0 MBR3060PT MBR3060PT C0G C0 G Green compound MBR3060PT MBR3060PTHC0 MBR3060PT H C0 AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 MAXIMUM FORWARD SURGE CURRENT PER LEG 35 225 30 8.3ms Single Half Sine Wave 200 JEDEC Method 25 175 150 20 125 15 100 RESISTIVE OR 10 75 INDUCTIVELOAD 5 WITH HEATSINK 50 0 25 0 25 50 75 100 125 150 0 1 10 100 CASE TEMPERATURE () NUMBER OF CYCLES AT 60 Hz FIG. 4 TYPICAL REVERSE CHARACTERISTICS PER LEG FIG. 3 TYPICAL FORWARD CHARACTERISTICS 100 PER LEG 100 TJ=125 10 TJ=125 10 1 TJ=25 1 0. 1 TJ=25 0. 1 0. 01 MBR3035PT-45PT MBR3050PT-60PT MBR3090PT-200PT MBR3035PT-3045PT MBR3050PT-30200PT 0. 01 0. 001 0 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6 0. 7 0. 8 0. 9 1 1. 1 1. 2 0 20 40 60 80 100 120 140 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS D1309029 Version: J13 AVERAGE FORWARD A FORWARD CURRENT (A) CURRENT (A) PEAK FORWARD SURGE CURRENT (A) REVERSE LEAKAGE CURRENT (mA)