MBR2535CTHC0 Taiwan Semiconductor

MBR2535CT thru MBR25150CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-220AB MECHANICAL DATA Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix on packing code - halogen-free Base P/N with prefix on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.9 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL 2535 2545 2550 2560 2590 25100 25150 UNIT CT CT CT CT CT CT CT Maximum repetitive peak reverse voltage V 35 45 50 60 90 100 150 V RRM Maximum RMS voltage V 24 31 35 42 63 70 105 V RMS Maximum DC blocking voltage V 35 45 50 60 90 100 150 V DC Maximum average forward rectified current I 25 A F(AV) Peak repetitive forward current I 25 A FRM (Rated VR, square wave, 20KHz) Peak forward surge current, 8.3 ms single half sine-wave I 200 A FSM superimposed on rated load Peak repetitive reverse surge current (Note 1) I 1 0.5 A RRM Maximum instantaneous forward voltage (Note 2) I =12.5A, T =25 - 0.75 0.85 0.95 F J I =12.5A, T =125 V F J -0.65 0.75 0.92 V F I =25A, T =25 F J 0.82 -0.92 1.02 I =25A, T =125 F J 0.73 - 0.88 0.98 0.2 0.2 0.1 0.1 Maximum reverse current rated VR T =25 J I mA R T =125 J 15 10 7.5 5 Voltage rate of change (Rated V ) dV/dt 10000 V/s R O Typical thermal resistance R 1.0 JC C/W O Operating junction temperature range T - 55 to +150 J C O Storage temperature range T - 55 to +150 STG C Note 1: tp = 2.0 s, 1.0KHz Note 2: Pulse test with PW=300s, 1% duty cycle Document Number: DS D1308065 Version: I13MBR2535CT thru MBR25150CT Taiwan Semiconductor ORDERING INFORMATION AEC-Q101 GREEN COMPOUND PACKING CODE PACKAGE PACKING PART NO. QUALIFIED CODE MBR25xxCT Prefix C0 Suffix TO-220AB 50 / Tube (Note 1) Note 1:x defines voltage from 35V (MBR2535CT) to 150V (MBR25150CT) EXAMPLE AEC-Q101 GREEN COMPOUND PREFERRED P/N PACKING CODE DESCRIPTION PART NO. QUALIFIED CODE MBR2560CT C0 C0 MBR2560CT MBR2560CT C0G MBR2560CT C0 G Green compound MBR2560CTHC0 H C0 AEC-Q101 qualified MBR2560CT RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG. 2- MAXIMUM NON-REPETITIVE FORWARD FIG.1- FORWARD CURRENT DERATING CURVE SURGE CURRENT PER LEG 30 250 8.3ms Single Half Sine Wave 25 JEDEC Method 225 20 200 15 175 10 150 RESISTIVE OR INDUCTIVELOAD 5 125 WITH HEATSINK 0 100 0 50 100 150 1 10 100 o CASE TEMPERATURE ( C) NUMBER OF CYCLES AT 60 Hz FIG. 3- TYPICAL INSTATANEOUS FORWARD FIG. 4- TYPICAL REVERSE CHARACTERISTICS CHARACTERISTICS PER LEG PER LEG 100 100 10 10 TJ=125 TJ=125 1 1 TJ=25 TJ=25 0. 1 Pulse Width=300s 1% Duty Cycle 0. 1 0. 01 MBR2535CT-MBR2545CT MBR2535CT-MBR2545CT MBR2550CT-MBR2560CT MBR2550CT-MBR25150CT MBR2590CT-MBR25150CT 0. 001 0. 01 0 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6 0. 7 0. 8 0. 9 1 1. 1 1. 2 0 20 40 60 80 100 120 140 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS D1308065 Version: I13 AVERAGE FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA)