VS-MBRB25..CTPbF, VS-MBR25..CT-1PbF Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A 2 FEATURES TO-263AB (D PAK) TO-262AA 150 C T operation J 2 Center tap D PAK and TO-262 packages Low forward voltage drop High frequency operation Base Base High purity, high temperature epoxy common common encapsulation for enhanced mechanical cathode cathode strength and moisture resistance 2 2 Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak 2 2 of 260 C 1 1 Common 3 3 Common AEC-Q101 qualified Anode cathode Anode Anode cathode Anode Material categorization: for definitions of compliance VS-MBRB25..CTPbF VS-MBR25..CT-1PbF please see www.vishay.com/doc 99912 PRODUCT SUMMARY DESCRIPTION 2 Package TO-263AB (D PAK), TO-262AA This center tap Schottky rectifier has been optimized for low I 30 A F(AV) reverse leakage at high temperature. The proprietary barrier V 35 V, 45 V R technology allows for reliable operation up to 150 C V at I 0.73 V F F junction temperature. Typical applications are in switching I max. 40 mA at 125 C RM power supplies, converters, freewheeling diodes, and T max. 150 C J reverse battery protection. Diode variation Common cathode E 16 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform (per device) 30 F(AV) A I T = 130 C (per leg) 30 FRM C V 35, 45 V RRM I t = 5 s sine 1060 A FSM p V 30 A , T = 125 C 0.73 V F pk J T Range -65 to +150 C J VOLTAGE RATINGS VS-MBRB2535CTPbF VS-MBRB2545CTPbF PARAMETER SYMBOL UNITS VS-MBR2535CT-1PbF VS-MBR2545CT-1PbF Maximum DC reverse voltage V R 35 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 15 Maximum average I T = 130 C, rated V F(AV) C R forward current per device 30 Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 130 C 30 FRM R C Following any rated load A 5 s sine or 3 s condition and with rated 1060 rect. pulse V applied Non-repetitive peak surge current I RRM FSM Surge applied at rated load conditions half wave, 150 single phase, 60 Hz Non-repetitive avalanche energy per leg E T = 25 C, I = 2 A, L = 8 mH 16 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 18-Oct-16 Document Number: 94308 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-MBRB25..CTPbF, VS-MBR25..CT-1PbF Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS T = 25 C 0.82 J (1) Maximum forward voltage drop V 30 A V FM T = 125 C 0.73 J T = 25 C 0.2 Maximum instantaneous J (1) I Rated DC voltage mA RM reverse current T = 125 C 40 J Threshold voltage V 0.355 V F(TO) T = T maximum J J Forward slope resistance r 12.3 m t Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 700 pF T R DC Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T -65 to +150 J C Maximum storage temperature range T -65 to +175 Stg Maximum thermal resistance, R DC operation 1.5 thJC junction to case per leg C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) 2 Case style D PAK MBRB2545CT Marking device Case style TO-262 MBR2545CT-1 Revision: 18-Oct-16 Document Number: 94308 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000