VS-MBR6045WT-N3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 30 A Base FEATURES common cathode 150 C T operation J 2 Very low forward voltage drop High frequency operation High purity, high temperature epoxy 1 encapsulation for enhanced mechanical 2 strength and moisture resistance 3 Guard ring for enhanced ruggedness and long term 13 Anode Anode reliability TO-247AC 3L 2 Common Designed and qualified according to JEDEC -JESD 47 cathode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS I 2 x 30 A DESCRIPTION F(AV) V 45 V R The VS-MBR6045WT... center tap Schottky rectifier has V at I 0.55 V been optimized for very low forward voltage drop, with F F moderate leakage. The proprietary barrier technology allows I max. 150 mA at 125 C RM for reliable operation up to 150 C junction temperature. T max. 150 C J Typical applications are in switching power supplies, E 27 mJ AS converters, freewheeling diodes, and reverse battery Package TO-247AC 3L protection. Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform 60 A F(AV) V 45 V RRM I t = 5 s sine 2900 A FSM p V 30 A , T = 125 C (per leg) 0.55 V F pk J T -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-MBR6045WT-N3 UNITS Maximum DC reverse voltage V R 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 30 Maximum average forward I 50 % duty cycle at T = 122 C, rectangular waveform F(AV) C current, see fig. 5 per device 60 A 5 s sine or 3 s rect. pulse Following any rated load 2900 Maximum peak one cycle non-repetitive I condition and with rated FSM surge current per leg, see fig. 7 10 ms sine or 6 ms rect. pulse V applied 360 RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 4 A, L = 3.4 mH 27 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 6A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 04-Jan-18 Document Number: 96469 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-MBR6045WT-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 30 A 0.62 T = 25 C J Maximum forward voltage drop per leg (1) V 60 A 0.75 V FM See fig. 1 30 A T = 125 C 0.55 J T = 25 C 1 J Maximum reverse leakage current per leg I (1) V = Rated V mA RM R R See fig. 2 T = 125 C 150 J Threshold voltage V 0.27 V F(TO) T = T maximum J J Forward slope resistance r 7.3 m t Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 1400 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 7.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -55 to 150 C J Stg temperature range Maximum thermal resistance, DC operation 1.0 junction to case per leg See fig. 4 R thJC Maximum thermal resistance, DC operation 0.5 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.24 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Marking device Case style TO-247AC 3L MBR6045WT Revision: 04-Jan-18 Document Number: 96469 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000