DB3J316N0L Panasonic

DB3J316N Silicon epitaxial planar type For small current rectication Unit: mm DB3X316N in SMini3 type package Features Short reverse recovery time t rr Low forward voltage V F Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 5J Basic Part Number Dual DB2S316 (Common Cathode) Packaging DB3J316N0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings T = 25C a 1: Anode-1 3: Cathode-1 Parameter Symbol Rating Unit 2: Anode-2 Cathode-2 Reverse voltage V 30 V R Panasonic SMini3-F2-B Repetitive peak reverse voltage V 30 V JEITA SC-85 RRM Code Single 100 Forward current (Average) I mA F(AV) 1 * Double 70 3 Single 300 Peak forward current I mA FM 1 * Double 200 2 * Non-repetitive peak forward surge current I 1 A FSM Junction temperature T 125 C j 1 2 Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +125 C stg Note) 1: Value of each diode in double diodes used. * 2: 50 Hz sine wave 1 cycle (Non-repetitive peak current) * Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Forward voltage V I = 100 mA 0.55 V F F Reverse current I V = 30 V 15 mA R R Terminal capacitance C V = 10 V, f = 1 MHz 2 pF t R 1 * Reverse recovery time t I = I =100 mA, I = 10 mA, R = 100 0.8 ns rr F R rr L Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 250 MHz 1: t measurement circuit * rr Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 10 mA rr t = 2 s I = 100 mA p F t = 0.35 ns I = 100 mA Pulse Generator Wave Form Analyzer r R = 0.05 R = 100 (PG-10N) (SAS-8130) L R = 50 R = 50 s i Publication date: May 2013 Ver. DED 1DB3J316N DB3J316N I -V DB3J316N Ct-VR DB3J316N I -V R R F F I V I V C V F F R R t R 2 1 10 10 Pulse test 85C 100C T = 125C T = 25C a a 3 10 1 8 10 T = 125C a 4 10 2 10 6 5 10 25C 100C 6 10 3 85C 10 4 7 10 40C 25C 4 10 2 8 10 40C 9 5 10 0 10 0 10 20 30 0 10 20 30 0 0.2 0.4 0.6 0.8 1.0 Reverse voltage V (V) Reverse voltage V (V) Forward voltage V (V) R R F Ver. DED 2 Forward current I (A) F Reverse current I (A) R Terminal capacitance C (pF) t