VS-MBRS190-M3, VS-MBRS1100-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A FEATURES Small foot print, surface mountable Low forward voltage drop High frequency operation Cathode Anode Guard ring for enhanced ruggedness and lon g term reliability Meets MSL level 1, per J-STD-020, LF maximum peak SMB (DO-214AA) of 260 C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS I 1 A F(AV) DESCRIPTION V 90 V, 100 V R The VS-MBRS190-M3, VS-MBRS1100-M3 surface-mount V at I 0.78 V F F Schottky rectifier has been designed for applications I 1 mA at 125 C RM requiring low forward drop and very small foot prints on PC T max. 175 C J boards. Typical applications are in disk drives, switching E 1.0 mJ power supplies, converters, freewheeling diodes, battery AS charging, and reverse battery protection. Package SMB (DO-214AA) Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 1.0 A F(AV) V 90, 100 V RRM I t = 5 s sine 870 A FSM p V 1.0 A , T = 125 C 0.63 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-MBRS190-M3 VS-MBRS1100-M3 UNITS Maximum DC reverse voltage V R 90 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 147 C, rectangular waveform 1.0 F(AV) L 5 s sine or 3 s rect. pulse Following any rated load 870 A Maximum peak one cycle I condition and with rated FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 50 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 0.5 A, L = 8 mH 1.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 0.5 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 17-Dec-2019 Document Number: 95744 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-MBRS190-M3, VS-MBRS1100-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS T = 25 C 0.78 Maximum forward voltage drop J (1) V 1 A V FM See fig. 1 T = 125 C 0.62 J T = 25 C 0.5 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 1.0 J Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 42 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 2.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T -55 to +175 C J Stg temperature range Maximum thermal resistance, DC operation (2) R 36 thJL junction to lead See fig. 4 C/W Maximum thermal resistance, R DC operation 80 thJA junction to ambient 0.10 g Approximate weight 0.003 oz. Marking device Case style SMB (DO-214AA) 19/10 Notes dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R (2) J thJA Mounted 1 square PCB Revision: 17-Dec-2019 Document Number: 95744 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000