DB3X317K0L Panasonic

Doc No. TT4-EA-12493 Revision. 2 Product Standards Schottky Barrier Diode DB3X317K0L DB3X317K0L Silicon epitaxial planar type Unit: mm 2.9 For high frequency rectification 0.4 0.16 3 Features Low forward voltage VF Forward current (Average) IF(AV) = 1 A rectification is possible Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 1.1 (0.95)(0.95) Marking Symbol: 5R 1.9 Packaging 1. Anode Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 2. N.C 3. Cathode Panasonic Mini3-G3-B JEITA SC-59A Code TO-236AA/SOT-23 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR 30 V Internal Connection Repctitive peak reverse voltage VRRM 30 V 3 Forward current (Average) IF(AV) 1 A *1 IFSM 5A Non-repetitive peak forward surge current Junction temperature Tj 125 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +125 C Note: *1 50 Hz sine wave 1 cycle (Non-repetitive peak current) 12 Page 1of 4 Established : 2010-03-29 Revised : 2013-04-26 1.5 2.8Doc No. TT4-EA-12493 Revision. 2 Product Standards Schottky Barrier Diode DB3X317K0L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit VF1 IF = 700 mA 0.41 0.48 V Forward voltage VF2 IF = 1 A 0.46 0.52 V Reverse current IR VR = 30 V 10 100 A Terminal capacitance Ct VR = 10 V, f = 1 MHz 22 pF IF = IR = 100 mA *1 trr 7.8 ns Reverse recovery time Irr = 0.1 IR, RL = 100 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1 trr test circuit Input Pulse Output Pulse Bias Application Unit (N-50BU) t t p r t 10% t rr I F t A 90% V R I = 0.1 I rr R t = 2 s I = 100 mA p F t = 0.35 ns I = 100 mA Pulse Generator Wave Form Analyzer r R = 0.05 R = 100 (PG-10N) (SAS-8130) L R = 50 R = 50 s i Page 2 of 4 Established : 2010-03-29 Revised : 2013-04-26