X-On Electronics has gained recognition as a prominent supplier of DB3X501K0L Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. DB3X501K0L Schottky Diodes & Rectifiers are a product manufactured by Panasonic. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

DB3X501K0L Panasonic

DB3X501K0L electronic component of Panasonic
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See Product Specifications
Part No.DB3X501K0L
Manufacturer: Panasonic
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers SCHOTTKY BARRIER GL WNG 2.9x2.8mm
Datasheet: DB3X501K0L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.1792
10 : USD 0.1142
100 : USD 0.0813
500 : USD 0.0651
1000 : USD 0.0571
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.854
10 : USD 0.552
100 : USD 0.1241
500 : USD 0.0946
1000 : USD 0.0752
3000 : USD 0.0577
9000 : USD 0.0483
24000 : USD 0.0464
45000 : USD 0.0415
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Recovery Time
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DB3X501K0L from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DB3X501K0L and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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Doc No. TT4-EA-12394 Revision. 2 Product Standards Schottky Barrier Diode DB3X501K0L DB3X501K0L Silicon epitaxial planar type Unit: mm For high speed switching circuits 2.9 DB2J501 in Mini3 type package 0.4 0.16 3 Features Short reverse recovery time trr Low terminal capacitance Ct Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 1.1 (0.95)(0.95) Marking Symbol:4H 1.9 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Anode 2. N.C 3. Cathode Panasonic Mini3-G3-B JEITA SC-59A Code TO-236AA/SOT-23 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR 50 V Internal Connection Repctitive peak reverse voltage VRRM 50 V Peak forward current IFM 300 mA 3 Forward current (Average) IF(AV) 200 mA *1 IFSM 1 A Non-repetitive peak forward surge current Junction temperature Tj 125 C Operating ambient temperature Topr -40 to +85 C 12 Storage temperature Tstg -55 to +125 C Note: *1 50 Hz sine wave 1 cycle (Non-repetitive peak current) Page 1of 4 Established : 2010-02-24 Revised : 2013-12-13 1.5 2.8Doc No. TT4-EA-12394 Revision. 2 Product Standards Schottky Barrier Diode DB3X501K0L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit VF1 V IF = 30 mA 0.36 Forward voltage VF2 IF = 200 mA 0.55 V Reverse current IR VR = 50 V 200 A Terminal capacitance Ct VR = 10 V, f = 1 MHz 4 pF IF = IR = 100 mA, *1 trr 1.6 ns Reverse recovery time Irr = 10 mA, RL = 100 Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Schottky diode is frail with static electricity, and it should be kept in safety from shock of static electricity and static electricity level. 3. Absolute frequency of input and output is 1 000 MHz. 4. *1 : trr measurement circuit Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 10 mA rr t = 2 s I = 100 mA p F t = 0.35 ns I = 100 mA Pulse Generator Wave Form Analyzer r R = 0.05 R = 100 (PG-10N) (SAS-8130) L R = 50 R = 50 s i Page 2 of 4 Established : 2010-02-24 Revised : 2013-12-13

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
PA4
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PB4
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