DB4X501K0R Panasonic

Doc No. TT4-EA-12390 Revision. 3 Product Standards Schottky Barrier Diode DB4X501K0R DB4X501K0R Silicon epitaxial planar type Unit: mm For high speed switching circuits 2.9 DB2J501 in Mini4 type package (0.95)(0.95) 0.13 4 3 Features Short reverse recovery time trr Low terminal capacitance Ct Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 0.65 0.4 1.1 Marking Symbol:4H (0.2) 1.9 Basic Part Number : Dual DB2J501 (Parallel) 1. Anode 1 3. Cathode 2 2. Anode 2 4. Cathode 1 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) Panasonic Mini4-G4-B JEITA SC-61AB Code TO-253/SOT-143 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR 50 V Internal Connection Repetitive peak reverse voltage VRRM 50 V 4 3 Non-repetitive peak Single 1 IFSM A 2 *1 0.75 forward surge current * Double Single 300 Peak forward current IFM mA *1 225 Double Single 200 Forward current (Average) IF(AV) mA *1 1 2 150 Double Junction temperature Tj 125 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +125 C Value of each diode in series diodes used. Note: *1 50 Hz sine wave 1 cycle (Non-repetitive peak current) *2 Page 1of 4 Established : 2010-02-22 Revised : 2013-12-13 1.5 2.8Doc No. TT4-EA-12390 Revision. 3 Product Standards Schottky Barrier Diode DB4X501K0R Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit VF1 0.36 IF = 30 mA Forward voltage V VF2 IF = 200 mA 0.55 Reverse current IR 200 VR = 50 V A Terminal capacitance Ct 4 VR = 10 V, f = 1 MHz pF IF = IR = 100 mA *1 trr 1.6 ns Reverse recovery time Irr = 10 mA, RL = 100 Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 1 000 MHz. 4. *1 : trr measurement circuit Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 10 mA rr t = 2 s I = 100 mA p F t = 0.35 ns I = 100 mA Pulse Generator Wave Form Analyzer r R = 0.05 R = 100 (PG-10N) (SAS-8130) L R = 50 R = 50 s i Page 2 of 4 Established : 2010-02-22 Revised : 2013-12-13