X-On Electronics has gained recognition as a prominent supplier of DD261N22K Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. DD261N22K Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

DD261N22K Infineon

DD261N22K electronic component of Infineon
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Part No.DD261N22K
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 2200V 410A
Datasheet: DD261N22K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 182.457 ea
Line Total: USD 182.46 
Availability - 16
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
16
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 182.457
12 : USD 178.948
27 : USD 175.428
51 : USD 174.097
102 : USD 174.075
252 : USD 174.042
501 : USD 174.031
1002 : USD 174.02
2502 : USD 173.954

   
Manufacturer
Product Category
Mounting
Case
Electrical Mounting
Semiconductor Structure
Type Of Module
Max Load Current
Max Forward Impulse Current
Max Forward Voltage
Max Off-State Voltage
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We are delighted to provide the DD261N22K from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DD261N22K and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Datenblatt / Data sheet Netz-Dioden-Modul DD261N Rectifier Diode Module Key Parameters V / V 2200 V DRM RRM I 260 A (T =100 C) TAVM C I 9500 A TSM V 0,70 V T0 r 0,68 m T R 0,164 K/W thJC Base plate 50 mm For type designation please refer to actual short form catalog Datenblatt / Data sheet Netz-Dioden-Modul DD261N Rectifier Diode Module DD261N Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 2000 V Periodische Spitzensperrspannung T = -40C... T V vj vj max RRM 2200 V repetitive peak reverse voltages 2100 V Stospitzensperrspannung T = +25C... T V vj vj max RSM 2300 V non-repetitive peak reverse voltage 410 A Durchlastrom-Grenzeffektivwert I FRMSM maximum RMS on-state current Dauergrenzstrom T = 100C I 260 A C FAVM average on-state current 9500 A Stostrom-Grenzwert T = 25C, t = 10ms I vj P FSM 8300 A surge current T = T , t = 10ms vj vj max P Grenzlastintegral T = 25C, t = 10ms It 451000 As vj P 344000 As It-value T = T , t = 10ms vj vj max P Charakteristische Werte / Characteristic values max. 1,42 V Durchlaspannung T = T , i = 800A v vj vj max F F on-state voltage T = T V max. 0,70 V Schleusenspannung vj vj max (TO) threshold voltage m max. 0 , 68 Ersatzwiderstand T = T r vj vj max T slope resistance T = T , v = V i max. 40 mA Sperrstrom vj vj max R RRM R reverse current Isolations-Prfspannung RMS, f = 50Hz, t = 1 sec V 3,6 kV ISOL insulation test voltage RMS, f = 50Hz, t = 1 min 3,0 kV Thermische Eigenschaften / Thermal properties Innerer Wrmewiderstand pro Modul / per Module, = 180 sin R max. 0,085 K/W thJC pro Zweig / per arm, = 180 sin max. 0,170 K/W thermal resistance, junction to case 0,082 pro Modul / per Module, DC max. K/W 0,164 pro Zweig / per arm, DC max. K/W bergangs-Wrmewiderstand pro Modul / per Module R max. 0,02 K/W thCH max. 0,04 K/W thermal resistance, case to heatsink pro Zweig / per arm 150 Hchstzulssige Sperrschichttemperatur T C vj max maximum junction temperature Betriebstemperatur T - 40...+150 C c op operating temperature T - 40...+150 C Lagertemperatur stg storage temperature HR date of publication: 2018-07-30 prepared by: revision: 3.2 approved by: ML Date of Publication 2018-07-30 Revision 3.2 Seite/page 2/10

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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