VS-MBRS360-M3/9AT Vishay

VS-MBRS360-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 3.0 A FEATURES Small foot print, surface mountable Very low forward voltage drop Cathode Anode High frequency operation Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak DO-214AB (SMC) of 260 C Material categorization: for definitions of compliance PRODUCT SUMMARY please see www.vishay.com/doc 99912 Package SMC DESCRIPTION I 3.0 A F(AV) V 60 V The VS-MBRS360-M3 surface mount Schottky rectifier has R been designed for applications requiring low forward drop V at I 0.61 V F F and small foot prints on PC boards. Typical applications are I max. 30 mA at 125 C RM in disk drives, switching power supplies, converters, T max. 150 C J freewheeling diodes, battery charging, and reverse battery Diode variation Single die protection. E 5.0 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 3.0 A F(AV) V 60 V RRM I t = 5 s sine 790 A FSM p V 3.0 A , T = 125 C 0.61 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-MBRS360-M3UNITS Maximum DC reverse voltage V R 60 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 50 % duty cycle at T = 118 C, rectangular waveform 3.0 L Maximum average forward current I F(AV) 50 % duty cycle at T = 105 C, rectangular waveform 4.0 L A Following any rated load 5 s sine or 3 s rect. pulse 790 Maximum peak one cycle I condition and with rated FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 80 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1.0 A, L = 10 mH 5.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 26-Aug-14 Document Number: 95749 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-MBRS360-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS 3 A 0.57 0.74 T = 25 C J 6 A 0.72 0.9 (1) Maximum forward voltage drop V V FM 3 A 0.51 0.61 T = 125 C J 6 A 0.62 0.77 T = 25 C -0.5 J (1) Maximum reverse leakage current I T = 100 C V = Rated V - 20 mA RM J R R T = 125 C - 30 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C - 180 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body - 3.0 nH S Maximum voltage rate of change dV/dt Rated V - 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage (1) T , T -55 to +150 C J Stg temperature range Maximum thermal resistance, (2) R 12 thJL junction to lead DC operation C/W Maximum thermal resistance, R 46 thJA junction to ambient 0.24 g Approximate weight 0.008 oz. Marking device Case style SMC (similar to DO-214AB) 36 Notes dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA (2) Mounted 1 square PCB Revision: 26-Aug-14 Document Number: 95749 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000