X-On Electronics has gained recognition as a prominent supplier of BAT54CTT1G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. BAT54CTT1G Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

BAT54CTT1G ON Semiconductor

BAT54CTT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.BAT54CTT1G
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 30V 225mW Dual Common Anode
Datasheet: BAT54CTT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0273 ea
Line Total: USD 81.9 
Availability - 14550
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
17460
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0377
6000 : USD 0.0369
12000 : USD 0.0355
27000 : USD 0.0344
51000 : USD 0.0331
102000 : USD 0.0325
150000 : USD 0.032
252000 : USD 0.0315

14550
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0273
9000 : USD 0.027

23280
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0469
9000 : USD 0.036

17460
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0511
6000 : USD 0.0499
12000 : USD 0.0479
27000 : USD 0.0466
51000 : USD 0.0449

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Recovery Time
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Termination Style
Type
Width
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAT54CTT1G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAT54CTT1G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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BAT54CT Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount www.onsemi.com package is excellent for hand held and portable applications where space is limited. 30 VOLT Features DUAL COMMON CATHODE Extremely Fast Switching Speed SCHOTTKY BARRIER DIODES Low Forward Voltage 0.35 Volts (Typ) I = 10 mAdc F S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 2 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant SC75 CASE 463 STYLE 3 MAXIMUM RATINGS (T = 125C unless otherwise noted) J Rating Symbol Value Unit 1 2 Reverse Voltage V 30 V R ANODE ANODE Forward Power Dissipation P F 3 T = 25C 225 mW A CATHODE Derate above 25C 1.8 mW/C Thermal Resistance, R C/W JA MARKING DIAGRAM Junction-to-Ambient (Note 1) 555 Forward Current (DC) I 200 Max mA F 5CM NonRepetitive Peak Forward I mA FSM Current, t < 10 msec 600 p 1 Repetitive Peak Forward Current I mA FRM 5C = Device Code Pulse Wave = 1 sec, 300 M = Date Code* Duty Cycle = 66% = PbFree Package Junction Temperature T 55 to 125 C J (Note: Microdot may be in either location) Storage Temperature Range T 55 to +150 C *Date Code orientation may vary depending up- stg on manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. 1. FR4 board with minimum mounting pad. Device Package Shipping BAT54CTT1G SC75 3,000 / Tape & Reel (PbFree) SBAT54CTT1G SC75 3,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 Publication Order Number: 1 November, 2014 Rev. 5 BAT54CTT1/DBAT54CT ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (EACH DIODE) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V V (BR)R (I = 10 A) 30 R Total Capacitance C pF T (V = 1.0 V, f = 1.0 MHz) 7.6 10 R Reverse Leakage I Adc R (V = 25 V) 0.5 2.0 R Forward Voltage V V F (I = 0.1 mA) 0.22 0.24 F (I = 1.0 mA) 0.29 0.32 F (I = 10 mA) 0.35 0.40 F (I = 30 mA) 0.41 0.50 F (I = 100 mA) 0.52 0.80 F Reverse Recovery Time t ns rr (I = I = 10 mAdc, I = 1.0 mAdc, Figure 1) 5.0 F R R(REC) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 +10 V 2 k 0.1 F I F t t T r p I F 100 H t T 10% 0.1 F rr DUT 90% 50 OUTPUT 50 INPUT i = 1 mA PULSE SAMPLING R(REC) I R GENERATOR OSCILLOSCOPE V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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