BAT54CXV3 Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount www.onsemi.com package is excellent for hand held and portable applications where space is limited. 30 VOLT Features DUAL COMMON CATHODE Extremely Fast Switching Speed SCHOTTKY BARRIER DIODES Low Forward Voltage 0.35 V (Typ) I = 10 mAdc F These Devices are PbFree, Halogen Free/BFR Free and are RoHS 3 Compliant 2 1 MAXIMUM RATINGS (T = 125C unless otherwise noted) J SC89 Rating Symbol Value Unit CASE 463C STYLE 3 Reverse Voltage V 30 V R Forward Power Dissipation P F T = 25C 240 mW A 1 2 Derate above 25C 1.9 mW/C ANODE ANODE Forward Current (DC) I 200 Max mA F 3 CATHODE NonRepetitive Peak Forward I 600 mA FSM Current, t < 10 msec p Repetitive Peak Forward Current I 300 mA FRM MARKING DIAGRAM Pulse Wave = 1 sec, Duty Cycle = 66% Junction Temperature T 55 to 125 C J 5CM Storage Temperature Range T 55 to +150 C stg 1 Thermal Resistance, R 525 C/W JA JunctiontoAmbient (Note 1) 5C = Device Code M = Date Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be = PbFree Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) 1. FR4 board with minimum mounting pad. ORDERING INFORMATION Device Package Shipping BAT54CXV3T1G SC89 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 Publication Order Number: 1 November, 2014 Rev. 3 BAT54CXV3/DBAT54CXV3 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (EACH DIODE) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V 30 V (BR)R (I = 10 A) R Total Capacitance C 7.6 10 pF T (V = 1.0 V, f = 1.0 MHz) R Reverse Leakage I 0.5 2.0 Adc R (V = 25 V) R Forward Voltage V V F (I = 0.1 mA) 0.22 0.24 F (I = 1.0 mA) 0.29 0.32 F (I = 10 mA) 0.35 0.40 F (I = 30 mA) 0.41 0.50 F (I = 100 mA) 0.52 0.80 F Reverse Recovery Time t 5.0 ns rr (I = I = 10 mAdc, I = 1.0 mAdc, Figure 1) F R R(REC) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 +10 V 2 k 0.1 F I F t t T r p I F 100 H t T 10% 0.1 F rr DUT 90% 50 OUTPUT 50 INPUT i = 1 mA PULSE SAMPLING R(REC) I R GENERATOR OSCILLOSCOPE V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2