1N5711-1 Microchip

1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1 DSB2810 and DSB5712 Qualified Levels: JAN, JANTX, and Schottky Barrier Diode Available on JANTXV commercial Qualified per MIL-PRF-19500/444 versions DESCRIPTION This Schottky barrier diode is metallurgically bonded and offers military grade qualifications for high-reliability applications on 1N prefixed numbers. This small diode is hermetically sealed and bonded into a DO-35 glass package. Important: For the latest information, visit our website 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1 DSB2810 and DSB5712 MECHANICAL and PACKAGING CASE: Hermetically sealed glass package. TERMINALS: Tin/lead plated or RoHS compliant matte-tin (on commercial grade only) over copper clad steel. Solderable per MIL-STD-750, method 2026. POLARITY: Cathode indicated by band. MARKING: Part number. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: Approximately 0.2 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N5711 -1 (e3) Reliability Level RoHS Compliance JAN = JAN level e3 = RoHS compliant (on JANTX = JANTX level commercial grade only) JANTXV = JANTXV level Blank = non-RoHS compliant CDS (reference JANS)* Blank = Commercial grade Metallurgically Bonded *Available only on 1N5711-1 JEDEC type number (see Electrical Characteristics table) DSB 2810 (e3) Diode Schottky Barrier RoHS Compliance e3 = RoHS compliant Series number Blank = non-RoHS compliant (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. f frequency I Reverse Current: The dc current flowing from the external circuit into the cathode terminal at the specified voltage V . R R Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave I O input and a 180 degree conduction angle. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from t rr the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. V (BR) Breakdown Voltage: A voltage in the breakdown region. V F Forward Voltage: A positive dc anode-cathode voltage the device will exhibit at a specified forward current. V Reverse Voltage: A positive dc cathode-anode voltage below the breakdown region. R Working Peak Reverse Voltage: The peak voltage excluding all transient voltages (ref JESD282-B). Also sometimes V RWM known historically as PIV. T4-LDS-0040, Rev. 4 (6/4/13) 2013 Microsemi Corporation Page 2 of 7