X-On Electronics has gained recognition as a prominent supplier of 1N5711UBD Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. 1N5711UBD Schottky Diodes & Rectifiers are a product manufactured by Microchip. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

1N5711UBD Microchip

1N5711UBD electronic component of Microchip
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Part No.1N5711UBD
Manufacturer: Microchip
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Schottky
Datasheet: 1N5711UBD Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 79.5194 ea
Line Total: USD 79.52 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 79.5194

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 79.5194

   
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RoHS - XON
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We are delighted to provide the 1N5711UBD from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N5711UBD and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1 DSB2810 and DSB5712 Qualified Levels: JAN, JANTX, and Schottky Barrier Diode Available on JANTXV commercial Qualified per MIL-PRF-19500/444 versions DESCRIPTION This Schottky barrier diode is metallurgically bonded and offers military grade qualifications for high-reliability applications on 1N prefixed numbers. This small diode is hermetically sealed and bonded into a DO-35 glass package. Important: For the latest information, visit our website 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1 DSB2810 and DSB5712 MECHANICAL and PACKAGING CASE: Hermetically sealed glass package. TERMINALS: Tin/lead plated or RoHS compliant matte-tin (on commercial grade only) over copper clad steel. Solderable per MIL-STD-750, method 2026. POLARITY: Cathode indicated by band. MARKING: Part number. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: Approximately 0.2 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N5711 -1 (e3) Reliability Level RoHS Compliance JAN = JAN level e3 = RoHS compliant (on JANTX = JANTX level commercial grade only) JANTXV = JANTXV level Blank = non-RoHS compliant CDS (reference JANS)* Blank = Commercial grade Metallurgically Bonded *Available only on 1N5711-1 JEDEC type number (see Electrical Characteristics table) DSB 2810 (e3) Diode Schottky Barrier RoHS Compliance e3 = RoHS compliant Series number Blank = non-RoHS compliant (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. f frequency I Reverse Current: The dc current flowing from the external circuit into the cathode terminal at the specified voltage V . R R Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave I O input and a 180 degree conduction angle. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from t rr the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. V (BR) Breakdown Voltage: A voltage in the breakdown region. V F Forward Voltage: A positive dc anode-cathode voltage the device will exhibit at a specified forward current. V Reverse Voltage: A positive dc cathode-anode voltage below the breakdown region. R Working Peak Reverse Voltage: The peak voltage excluding all transient voltages (ref JESD282-B). Also sometimes V RWM known historically as PIV. T4-LDS-0040, Rev. 4 (6/4/13) 2013 Microsemi Corporation Page 2 of 7

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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Atmel
Atmel Wireless (VA)
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MICROCHIPDIRECT
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Microsemi Analog Mixed Signal Group
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