X-On Electronics has gained recognition as a prominent supplier of 1N5821 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. 1N5821 Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

1N5821 ON Semiconductor

1N5821 electronic component of ON Semiconductor
1N5821 ON Semiconductor
1N5821 Schottky Diodes & Rectifiers
1N5821  Semiconductors

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See Product Specifications
Part No. 1N5821
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Schottky Barrier
Datasheet: 1N5821 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8743 ea
Line Total: USD 0.87 
Availability - 77
Ship by Mon. 03 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
77
Ship by Mon. 03 Feb
MOQ : 1
Multiples : 1
1 : USD 0.8743
10 : USD 0.4371
50 : USD 0.3934
250 : USD 0.3279
500 : USD 0.2951

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 1N5821 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N5821 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and 1N5820, 1N5821, 1N5822 MAXIMUM RATINGS Rating Symbol 1N5820 1N5821 1N5822 Unit Peak Repetitive Reverse Voltage V 20 30 40 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Non-Repetitive Peak Reverse Voltage V 24 36 48 V RSM RMS Reverse Voltage V 14 21 28 V R(RMS) Average Rectified Forward Current (Note 1) I A 3.0 O V 0.2 V , T = 95C R(equiv) R(dc) L (R = 28C/W, P.C. Board Mounting, see Note 5) JA Ambient Temperature T 90 85 80 C A Rated V , P = 0 R(dc) F(AV) R = 28C/W JA Non-Repetitive Peak Surge Current I 80 (for one cycle) A FSM (Surge applied at rated load conditions, half wave, single phase 60 Hz, T = 75C) L Operating and Storage Junction Temperature Range T , T -65 to +125 C J stg (Reverse Voltage applied) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *THERMAL CHARACTERISTICS (Note 5) Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient 28 C/W R JA *ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Note 1) L Characteristic Symbol 1N5820 1N5821 1N5822 Unit Maximum Instantaneous Forward Voltage (Note 2) V V F (i = 1.0 Amp) 0.370 0.380 0.390 F (i = 3.0 Amp) 0.475 0.500 0.525 F (i = 9.4 Amp) 0.850 0.900 0.950 F Maximum Instantaneous Reverse Current i mA R Rated dc Voltage (Note 2) T = 25C 2.0 2.0 2.0 L T = 100C 20 20 20 L 1. Lead Temperature reference is cathode lead 1/32 from case. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. *Indicates JEDEC Registered Data for 1N5820-22.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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