Product Information

1N5767

1N5767 electronic component of Microchip

Datasheet
PIN Diodes Specialty PIN Diodes

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

320: USD 25.4179 ea
Line Total: USD 8133.73

0 - Global Stock
MOQ: 320  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 320
Multiples : 1

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1N5767
Microchip

320 : USD 25.4179
3200 : USD 23.3418
32000 : USD 17.614
160000 : USD 15.2275

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 18
Multiples : 18

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1N5767
Microchip

18 : USD 49.611

     
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WWW.Microsemi .COM 1N5767/1N5957 1N5767/1N5957 1N5767 (5082-3080) SERIES 1N5957SERIES KEY FEATURES DESCRIPTION Useful attenuation from 1 A The 1N5767 and the 1N5957 PIN diodes Both switch and attenuator applications. to 100 mA bias are based upon low capacitance PIN chips The 1N5957 is primarily used as an attenuator designed with long minority carrier lifetime, PIN diode and is particularly suitable wherever Capacitance below 0.4 pF and thick intrinsic width. Thus operation as current controlled, wide dynamic range resistance low as 1 MHz is possible with low elements are required. The 1N5957 has also been Low distortion in switches and distortion. Additionally, the low diode characterized for the 75 attenuator, commonly attenuators capacitance allows useful operation well employed in CATV systems. into the microwave frequency range. Metallurgical bond The 1N5767 (5082-3080) is a general Sealed in glass purpose low power PIN diode designed for Thermally matched construction IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM ELECTRICALS ELECTRICALS 1N5767 (5082-3080) SERIES 1N5957SERIES Parameter Symbol Conditions 1N5767 1N5957 Units Total Capacitance (Max) C V =100V, F= 1 MHz 0.4 0.4 pF T R Series Resistance R If = 10 A, F= 100 MHz 1000(min) 1500(min) Ohms S 2000(typ) 3000(typ) Series Resistance R If = 20 mA, F = 100 MHz 8(max) 8(max) Ohms S 4(typ) 6(typ) Series Resistance R If = 100 mA, f = 100 MHz 2.5(max) 3.5(max) Ohms S 1.5(typ) 2.0(typ) Carrier Lifetime I = 10 mA 1.0(min) 1.5(min) s F 2.0(typ) Reverse Current I V = Voltage rating 10(max) 10(max) A R R Current for Rs = 75 I Rs = 75 0.7 0.8 1.2 mA 75 Return Loss - Diode terminates 75 line 30(typ) 30(typ) dB Second Order Distortion - Bridged tee attenuator -40(typ) -50(typ) dB Attenuation = 10 dB Third Order Distortion - Pin = 50 dBmv -60(typ) -65(typ) dB F1 = 10 MHz F2 = 13 MHz Rs versus If TYPICAL 20000 f = 100 MHz 10000 1000 1N5957 1N5767 (3080) 100 10 1 -3 -2 -1 0 1 2 10 10 10 10 10 10 If (mA) Copyright 2005 Microsemi Page 2 Rev. 0, 2006-01-17 Rs (Ohms)

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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