WWW.Microsemi .COM UUMM99330011//UUMM99330011SSM M UM9301/UM9301SM Commercial Attenuator Diode PRODUCT PREVIEW KEY KEY FEATUFEATURRESES DESCRIDESCRIDESCRIDESCRIPTIONPTIONPTIONPTION KEY KEY FEATUFEATURRESES The UM9301 PIN Diode utilizes special Low distortion and high dynamic range are Specified low distortion overall chip geometry with an extremely characteristic of the diodes outstanding Low distortion properties at low thick intrinsic I region, to offer unique performance. reverse bias capabilities in both RF switch and The UM9301 is also appropriate for Resistance specified at 3 current attenuator applications. switch applications, when little or no bias points Volume production also makes the diode voltage is available. Frequent applications High reliability fused-in-glass an economical choice suitable for many occur in portable 12 volt-powered construction commercial low power equipments. communications equipments, operating at The UM9301 has been designed for use frequencies as low as 2 MHz. in bridged TEE attenuator circuits commonly utilized for gain and slope APPL APPLAPPLAPPLICAICAICAICATIOTIOTIOTIONS/BNS/BNS/BNS/BENEFENEFENEFENEFITITITITSS SS control in CATV amplifiers. Little or no Bias required. Operates as low as 2MH . Z IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM ELECTRICAL ELECTRICAL UM9301/UM9301SM Commercial Attenuator Diode PRODUCT PREVIEW ELECTRICAL PARAMETERS 25C (unless otherwise specified) Parameter Symbol Conditions Min Typ. Max Units Off Characteristics I = 100 mA f = 100 MH 1.7 Z 3.0 Diode Resistance R I = 1 mA f = 100 MH 80 S Z 150 I = 0.01 mA f = 100 MH Z 3000 5000 Current for R = 75 I R f = 100 MH 0.5 1.1 2.0 mA S S Z R Frequency Range: 10-300MH Z I Return Loss RS = 75 100MHZ 25 dB Diode Terminates 75 line f = 10 MH f = 13 MH 1 Z 2 Z 55 50 -dB P = 50 dBmV See Test Circuit Second Order Distortion V F = 67 MH f = 77 MH 1 Z 2 Z 70 -dB P = 50 dBmV See Test Circuit F = 10 MH F = 13 MH 1 Z 2 Z 75 65 -dB P = 50 dBmV See Test Circuit Third Order Distortion V Triple Beat 205 +67 77MH Z 95 -dB P = 50 dBmV See Test Circuit 12 Channel Test Cross Modulation V P = 50 dBmV See Test Circuit 75 -dB Distortion Dix Hills Test Set Reverse Current I V = 75 V 10 A R Carrier Lifetime I = 10 mA 4.0 s Dynamic characteristics Capacitance CT V = 0V f = 100 MHZ 0.8 pF PRODUCT PRELIMINARY DATA Information contained in this document is pre-production data, and is proprietary to Microsemi Corp. It may not be modified in any way without the express written consent of Microsemi Corp. Product referred to herein is not guaranteed to achieve preliminary or production status and product specifications, configurations, and availability may change at any time. Copyright 2005 Microsemi Page 2 Rev. A, 2005-07-05 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748